ROHM RRQ030P03 Specifications User Guide
Summary
This comprehensive data sheet provides detailed technical specifications for a low on-resistance, high power N-channel MOSFET. It covers crucial performance metrics including absolute maximum ratings, static on-state resistance ($\text{R}_{\text{DS(on)}}$), switching characteristics, body diode behavior, and thermal management details (e.g., $\text{R}_{\text{th}(\text{c–a})}$). Designed for reliability in general electronic applications such as audio/visual equipment, office automation, and standard appliances—but not safety-critical systems—this manual is essential for engineers selecting components requiring efficient switching performance within a robust package.
Page 1 Text Content
4V Drive Pch MOSFET RRQ030P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET
TSMT6
1.0MAX
Features 1) Low On-resistance.
2) High Power Package. (1) (2) (3)
1pin mark
3) High speed switching.
Each lead has same dimensions
Abbreviated symbol : UA
Applications Equivalent circuit Switching
Packaging specifications
Package Taping
Type Code TR ∗1
Basic ordering unit (pieces)
RRQ030P03 (1)DRAIN (2)DRAIN
(3)GATE
(4)SOURCE ∗1 ESD PROTECTION DIODE (5)DRAIN (6)DRAIN∗2 BODY DIODE
Absolute maximum ratings (Ta=25°C)
Parameter Symbol Limits Unit
Drain−source voltage VDSS −30
Gate−source voltage VGSS ±20
Continuous ID ±3
Drain current
Pulsed IDP ±12
Continuous IS −1
Source current (Body diode) ∗1
Pulsed ISP −12 ∗2
Total power dissipation PD 1.25
Channel temperature Tch °C
Range of Storage temperature Tstg −55 to +150 °C
∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board
Thermal resistance
Parameter Symbol Limits Unit
Channel to ambient 100∗ °C / WRth(ch-a) ∗ When mounted on a ceramic board.
www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reserved. 2009.03 - Rev.A 1/4
Page Summary Contents For ROHM RRQ030P03 Specifications User Guide
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 5 |
| File Size | 216.95 KB |
| Published | July 22, 2026 |
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