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ROHM 2SAR554P Specifications User Guide

Summary

The 2SAR554P is a high-performance PNP Silicon epitaxial planar transistor engineered for advanced electronic switching needs. Featuring low saturation voltage and high-speed switching capabilities, this component is ideal for integrating into general-purpose equipment such as audio/visual gear, communication devices, and consumer electronics. This technical manual provides comprehensive guidelines, detailing absolute maximum ratings, electrical characteristics, current gain curves, and essential switching time data for reliable circuit design.

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Midium Power Transistors (-80V / -1.5A) 2SAR554P

Structure Dimensions (Unit : mm) PNP Silicon epitaxial planar transistor

Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -500m A / -25m A)

2) High speed switching

Applications

Abbreviated symbol : MH

Driver

Packaging specifications Inner circuit (Unit : mm)

Package Taping

Type Code T100

Basic ordering unit (pieces)

2SAR554P

Absolute maximum ratings (Ta = 25C)

Parameter Symbol Limits Unit (1) Base (2) Collector

Collector-base voltage VCBO -80

(3) Emitter

Collector-emitter voltage VCEO -80

Emitter-base voltage VEBO -6

DC IC -1.5

Collector current

Pulsed ICP *1 -3 *2 PD 0.5

Power dissipation

*3 PD

Junction temperature Tj C Range of storage temperature Tstg -55 to 150 C *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board. (40x40x0.7mm³)

www.rohm.com

1/4 2009.12 - Rev.A

○c 2009 ROHM Co., Ltd. All rights reserved.

Page Summary Contents For ROHM 2SAR554P Specifications User Guide

Page 1 Midium Power Transistors (-80V / -1.5A) 2SAR554P Structure Dimensions (Unit : mm) PNP Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC ...
Page 2 Data Sheet 2SAR554P Electrical characteristic (Ta = 25C) Symbol Min. Typ. Max. Unit Conditions Parameter Collector-emitter breakdown voltage BVCEO -80 IC= -1m A Collector-base breakdown voltage BVC...
Page 3 Data Sheet 2SAR554P LL CE OT UPT APA NATI C : )Fp(bo CELL OT UTAS OITA OV GATL : E tas( )[V CELL OT NE : T IC [A Electrical characteristic curves ME TI RET NI UP C T CAPA NATI C : E )Fp(bi -2.5m A T...
Page 4 Data Sheet 2SAR554P Switching time test circuit RL=15Ω VCC -10V~_ Pw 50μs DUTY CYCLE1% BASE CURENT WAVEFORM tstgton tf COLLECTOR CURRENT WAVEFORM IC www.rohm.com 4/4 2009.12 - Rev.A ○c 2009 ROHM Co....
Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand ROHM
Pages 5
File Size 238.23 KB
Published May 31, 2026
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Frequently Asked Questions

What is the maximum DC collector current and voltage rating?

The Collector current limit (DC I) is -1.5 A, and the Collector-Emitter breakdown voltage (VCEO) is rated at -80 V.

How must this transistor be safely mounted for operation?

It must be mounted on a recommended land or mounted on a ceramic board. Users should always implement safety measures like derating and redundancy.

Can I use this device in systems requiring extremely high reliability?

No, the product is not designed for equipment that requires an extremely high level of reliability, such as medical instruments or aerospace machinery.

What specific performance characteristic indicates its suitability for high-speed switching applications?

It offers high speed switching capabilities and has a transition frequency (fT) up to 200 MHz.