ROHM 2SD1383K Specifications User Guide

Summary

This high-gain bipolar junction transistor provides robust amplification using a Darlington connection structure. This comprehensive manual is an essential resource for electrical engineers, detailing all required specifications including absolute maximum ratings, dynamic performance graphs, current transfer ratios ($h_{FE}$), and breakdown voltage curves across various temperatures. It is the ideal component for developers creating general electronic equipment, from audio-visual devices to sophisticated communication systems requiring stable output power.

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High-gain Amplifier Transistor (32V , 0.3A) 2SD1383K Features Dimensions (Unit : mm) 1) Darlington connection for high DC current gain.

2SD1383K

2) Built-in 4k resistor between base and emitter. 3) Complements the 2SB852K.

Packaging specifications

Type 2SD1383K Package SMT3

Marking W∗

(1)Emitter

Code T146 (2)Base

Basic ordering unit (pieces) (3)Collector

Each lead has same dimensions

∗ Denotes h FE

Circuit diagram

RBE 4kΩ

E : Emitter B : Base C : Collector

Absolute maximum ratings (Ta=25C)

Parameter Symbol Limits Unit

Collector-base voltage VCBO

Collector-emitter voltage VCES ∗1

Emitter-base voltage VEBO

0.3 A (DC)

Collector current IC

1.5 A (Pulse) ∗2

Collector power dissipation PC 0.2

Junction temperature Tj °C Storage temperature Tstg −55 to +150 °C ∗1 RBE=0Ω ∗2 Single pulse Pw=10ms

Electrical characteristics (Ta=25C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO IC=100μA Collector-emitter breakdown voltage BVCES IC= −1m A , RBE=0Ω Emitter-base breakdown voltage BVEBO IE=100μA Collector cutoff current ICBO μA VCB=24V Emitter cutoff current IEBO μA VEB=4.5V DC current transfer ratio h FE VCE=5V, IC=0.1A

Collector-emitter saturation voltage VCE(sat) 1.5 IC=200m A, IB=0.4m A ∗1

Transition frequency f T MHz VCE=5V, IE= −10m A, f=100MHz ∗2

Output capacitance Cob p F VCB=10V, IE=0A, f=1MHz

∗1 Measured using pulse current. ∗2 Transition frequency of the device.

Page Summary Contents For ROHM 2SD1383K Specifications User Guide

Page 1 High-gain Amplifier Transistor (32V , 0.3A) 2SD1383K Features Dimensions (Unit : mm) 1) Darlington connection for high DC current gain. 2SD1383K 2) Built-in 4k resistor between base and emitter. 3)...

Page 2 2SD1383K Data Sheet IS IO f T z) IN h F IS IP IO /P ax Electrical characteristic curves VCE=6V Ta=25°C IB=10μA BASE TO EMITTER VOLTAGE : VBE (V) IN h F LL IC (m AMBIENT TEMPERATURE : Ta (°C) IT ob p ...

Page 3 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	3
File Size	141.71 KB
Published	June 18, 2026

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Frequently Asked Questions

What is the typical DC current transfer ratio hFE of this transistor?

The typical DC current transfer ratio (hFE) specified under test conditions is 5000.

Can I use this component in mission-critical or safety equipment?

No, it is not designed for systems requiring an extremely high level of reliability, such as medical instruments or aerospace machinery.

What are the absolute maximum ratings for junction temperature and storage?

The maximum junction temperature (Tj) is 150 °C, and the permissible storage temperature range is -55 to +150 °C.

How does the transistor achieve high DC current gain?

It utilizes a Darlington connection structure for enhanced DC current gain functionality.