ROHM 2SD1383K 2SC1645S DATA SHEET

Summary

This comprehensive technical manual details the 2SD1383K and 2SC1645S high-gain amplifier transistors. The datasheet provides essential specifications, including absolute maximum ratings, detailed electrical characteristics (like hFE and $f_T$), and multiple output curves for circuit design validation. It serves as a critical resource for electronics engineers, circuit designers, and technicians who require reliable, power-handling transistors for complex amplification and switching applications.

📄 Preview 📖 Table of Contents Contents ‹ PAGE OF 4 ›

‹

ROHM 2SD1383K 2SC1645S DATA SHEET - Page 1

›

Page 1 Text Content

2SD1383K / 2SC1645S

Transistors

High-gain Amplifier Transistor (32V , 0.3A) 2SD1383K / 2SC1645S

Features External dimensions (Unit : mm)

1) Darlington connection for high DC current gain.

2SD1383K

2) Built-in 4kΩ resistor between base and emitter.

3) Complements the 2SD852K / 2SA830S.

Circuit diagram

(1)Emitter (2)Base

Each lead has same dimensions

(3)Collector

RBE 4kΩ

2SC1645S

E : Emitter B : Base 4.0 2.0

C : Collector (1 5M in 3.

3M in. 2.

Packaging specifications

Type 2SD1383K 2SC1645S

5.0 0. 3M in

Package SMT3 SPT (1) (2) (3)

h FE (1)Emitter Marking W∗ (2)Collector

Taping specifications

Code T146 TP (3)Base

Basic ordering unit (pieces) ∗ Denotes h FE

Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO

Collector-emitter voltage VCEO ∗1

Emitter-base voltage VEBO

0.3 A (DC)

Collector current IC

1.5 A (Pulse) ∗2

Collector power dissipation PC 0.2 Junction temperature Tj °C Storage temperature Tstg −55 to +150 °C ∗1 RBE=0Ω ∗2 Single pulse Pw=10ms

Rev.A 1/3

Page Summary Contents For ROHM 2SD1383K 2SC1645S DATA SHEET

Page 1 2SD1383K / 2SC1645S Transistors High-gain Amplifier Transistor (32V , 0.3A) 2SD1383K / 2SC1645S Features External dimensions (Unit : mm) 1) Darlington connection for high DC current gain. 2SD1383K 2) ...

Page 2 IN h F 2SD1383K / 2SC1645S IS IP IO /P ax Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO IC=100µA Collector-emi...

Page 3 2SD1383K / 2SC1645S IS IO f T z) Transistors Ta=25°C Ta=25°C Ta=25°C VCE=6V f=1MHz f=1MHz IE=0A IE=0A IT ob p F EMITTER CURRENT : IE (m A) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE :...

Page 4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand	ROHM
Pages	4
File Size	72.35 KB
Published	May 27, 2026

46 views

Enter the captcha to get the download link:

Frequently Asked Questions

What is a key feature of these transistors?

They utilize a Darlington connection for achieving high DC current gain.

What are the absolute maximum ratings for operation?

The Collector-emitter voltage (VCEO) must not exceed 32 V, and the collector current (IC) limit is 1.5 A (Pulse).

Can these transistors be used in life-safety critical equipment?

No; users must consult with a sales representative if intended for applications requiring extremely high reliability, such as medical instruments or transport machinery.

What is the device's maximum transition frequency?

The Transition Frequency (fT) can reach up to 250 MHz.