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ROHM 2SAR543R Data Sheet

Summary

This medium-power PNP Silicon epitaxial planar transistor is designed for high-reliability, high-speed switching applications requiring low saturation voltage $\text{V}_{CE(sat)}$. The associated technical manual serves as a comprehensive resource for electronics engineers and product designers. It details absolute maximum ratings, critical electrical characteristics (including current gain $h$ and transition frequency $f_T$), and detailed operating curves, enabling accurate integration into demanding medium-power circuits and electronic control systems.

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Midium Power Transistors (-50V / -3A) 2SAR543R Structure Dimensions (Unit : mm) PNP Silicon epitaxial planar transistor

TSMT3

Features 1) Low saturation voltage

VCE (sat) = -0.4V (Max.) (IC / IB= -2A / -100m A) 2) High speed switching

(1) Base

Applications (2) Emitter

(3) Collector Abbreviated symbol : MR

Driver

Packaging specifications Inner circuit (Unit : mm)

Package TSMT3 (2)

Type Code TL Basic ordering unit (pieces)

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit (1) Base

(2) Emitter

Collector-base voltage VCBO -50

(3) Collector

Collector-emitter voltage VCEO -50 Emitter-base voltage VEBO -6

DC IC -3

Collector current

Pulsed ICP *1 -6 PD *2 0.5

Power dissipation

PD *3 1.0

Junction temperature Tj °C

Range of storage temperature Tstg -55 to 150 °C *1 Pw=10ms, Single Pulse *2 Mounted on a recommended land *3 Mounted on a ceramic substrate(40400.7mm)

www.rohm.com

©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.12 - Rev.A

Page Summary Contents For ROHM 2SAR543R Data Sheet

Page 1 Midium Power Transistors (-50V / -3A) 2SAR543R Structure Dimensions (Unit : mm) PNP Silicon epitaxial planar transistor TSMT3 Features 1) Low saturation voltage VCE (sat) = -0.4V (Max.) (IC / IB= -2...
Page 2 2SAR543R Data Sheet Electrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Conditions Parameter Collector-emitter breakdown voltage BVCEO -50 IC= -1m A Collector-base breakdown voltage BVCBO...
Page 3 2SAR543R Data Sheet Electrical characteristic curves (Ta=25C) IO (s t) [V IN [A Fig.1 Typical Output Characteristics Fig.2 DC Current Gain vs. Collector Current (Ⅰ) Ta=25C -0.6 VCE=-5V -3V IB=-0.5m...
Page 4 2SAR543R Data Sheet IT (p IT IT ib (p Fig.7 Emitter input capacitance vs. Emitter-Base Voltage Fig8. Gain Bandwidth Product vs. Emitter Current Collector output capacitance vs.Collector-Base Voltage T...
Page 5 2SAR543R Data Sheet Switching time test circuit RL=4.7Ω VCC -10V Pw 50μs DUTY CYCLE≦1% BASE CURENT WAVEFORM tstgton tf COLLECTOR CURRENT WAVEFORM IC www.rohm.com ©2010 ROHM Co., Ltd. All rights reser...
Page 6 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand ROHM
Pages 6
File Size 489.42 KB
Published June 01, 2026
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Frequently Asked Questions

What applications are restricted for this transistor?

It should not be used in equipment requiring an extremely high level of reliability, such as medical, aerospace, or nuclear control devices.

What is the maximum absolute voltage and current rating?

The ratings are a Collector-base voltage (Vcb) of -50V and a Collector-emitter voltage (Vce) of -50V, with a DC collector current limit of -3A.

How should I mount this transistor for safe operation?

It must be mounted on either a recommended land or a ceramic substrate to properly dissipate heat.

What is the typical Collector-emitter saturation voltage (Vce(sat))?

The typical range for Vce(sat) when operating at I = -2A and II = -100mA is between -200mV and -400mV.