ROHM RRR040P03 Specifications User Guide

Summary

This P-channel MOSFET is a compact, high-efficiency power switching component featuring low on-resistance and dedicated 4V drive capability. The comprehensive datasheet provides electrical engineers with all necessary technical specifications, including absolute ratings, detailed transfer characteristics, thermal resistance data, and switching performance curves. Ideal for integrating into general commercial electronic devices such as audio-visual, communication, or office automation equipment requiring reliable power control.

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4V Drive Pch MOSFET RRR040P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT3

Features (3)

1) Low On-resistance. 2) Space saving small surface mount package (TSMT3).

3) 4V drive.

Abbreviated symbol : UG

Application Switching

Packaging specifications Inner circuit

Package Taping (3)

Type Code TL Basic ordering unit (pieces) RRR040P03

Absolute maximum ratings (Ta = 25C)

(1) Gate

Parameter Symbol Limits Unit (2) Source

∗1 ESD PROTECTION DIODE

(3) Drain

Drain-source voltage VDSS 30 ∗2 BODY DIODE

Gate-source voltage VGSS  20 Continuous ID  4

Drain current

Pulsed IDP  16 Source current Continuous IS 0.8 (Body Diode) *1 Pulsed ISP 16 *2 Power dissipation PD 1.0

Channel temperature Tch C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

Thermal resistance

Parameter Symbol Limits Unit

Channel to Ambient Rth (ch-a) C / W *Mounted on a ceramic board.

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Page Summary Contents For ROHM RRR040P03 Specifications User Guide

Page 1 4V Drive Pch MOSFET RRR040P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT3 Features (3) 1) Low On-resistance. 2) Space saving small surface mount package (TSMT3). 3) 4V drive. Ab...

Page 2 RRR040P03 Data Sheet Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V(BR)DSS 3...

Page 3 RRR040P03 Data Sheet IC IN -S -S IC IN -S -S Electrical characteristics curves IS (o IS (o IN -I [A Ta=25°C Ta=25°C VDS= -10V VGS= -10V Pulsed Pulsed VGS= -2.8V Pulsed VGS= -4.5V Ta= 125°C VGS= -4.0V...

Page 4 RRR040P03 Data Sheet IC IN -S -S IS (O Ta=25°C Ta=25°C VDD= -15V Pulsed ID= -2.0A td(off) VGS= -10V tf RG=10Ω Pulsed ID= -4.0A td(on) Ta=25°C VDD= -15V ID= -4.0A RG=10Ω tr Pulsed 0.01 0.1 IT IN IM ns ...

Page 5 RRR040P03 Data Sheet Measurement circuits Pulse Width ID VGS VGS 50% 50% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching time measurement circuit Fig.1-2 Switching Waveforms IG(Const.) D...

Page 6 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	6
File Size	295.47 KB
Published	July 15, 2026

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Frequently Asked Questions

Can I use this component in life-critical systems like aerospace or medical devices?

No, it is not designed for equipment requiring an extremely high level of reliability, such as medical instruments or nuclear reactor controllers.

What mounting surface is recommended for optimal thermal performance?

The measurements and ratings assume the device is mounted on a ceramic board.

What are the limits for the drain-source voltage (Vdss)?

The absolute maximum rating for the drain-source voltage is -30V.

Does this MOSFET handle radiation or extremely volatile environments?

No, the specified products are not designed to be radiation tolerant.