ROHM EMT2, UMT2N, IMT2A Data Sheet User Manual

EMT2 / UMT2N / IMT2A

Transistors

General purpose (dual transistors) EMT2 / UMT2N / IMT2A

Features External dimensions (Unit : mm)

1) Two 2SA1037AK chips in a EMT or UMT or SMT package.

(6) (1) Equivalent circuits 1.2 1.6

EMT2 / UMT2N IMT2A

Each lead has same dimensions

ROHM : EMT6

Tr1 Tr1 Tr2 Tr2

UMT2N

Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit

Collector-base voltage VCBO −60 Collector-emitter voltage VCEO −50

0. 0. 0.1Min.

Emitter-base voltage VEBO −6 0. 0.

Each lead has same dimensions

Collector current IC −150 m A

ROHM : UMT6

Collector power 150(TOTAL)EMT2 / UMT2N 0~ 0. ∗1 EIAJ : SC-88

PC m W 0~ 0.

dissipation IMT2A

300(TOTAL) ∗2

Junction temperature Tj °C 0. 0.

IMT2A

Storage temperature Tstg −55 to +150 °C 0. 0.

∗1 120m W per element must not be exceeded. 1.

∗2 200m W per element must not be exceeded.

Package, marking, and packaging specifications

Type EMT2 UMT2N IMT2A

Package EMT6 UMT6 SMT6

0.3Min.

Marking T2 T2 T2 Code T2R TR T108

Each lead has same dimensions

Basic ordering unit (pieces)

ROHM : SMT6 EIAJ : SC-74

Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown voltage BVCBO −60 IC=−50µA Collector-emitter breakdown voltage BVCEO −50 IC=−1m A

Emitter-base breakdown voltage BVEBO −6 IE=−50µA

Collector cutoff current ICBO −0.1 µA VCB=−60V Emitter cutoff current IEBO −0.1 µA VEB=−6V Collector-emitter saturation voltage VCE(sat) −0.5 IC/IB=−50m A/−5m A DC current transfer ratio h FE VCE=−6V, IC=−1m A Transition frequency f T MHz VCE=−12V, IE=2m A, f=100MHz

Output capacitance Cob p F VCE=−12V, IE=0A, f=1MHz

∗Transition frequency of the device.

Rev.A 1/2