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ROHM ES6U2 Data Sheet User Manual

Summary

Product specification for ROHM ES6U2 1.5V drive N-channel MOSFET plus Schottky barrier diode in compact WEMT6 surface-mount package, integrating two independent semiconductor devices for space-saving and performance optimization in portable electronics. Features N-channel MOSFET with low on-resistance (RDS(ON) = 130mΩ typical at VGS = 1.5V, ID = 1.5A; 180mΩ typical at VGS = 1.2V, ID = 1.5A) optimized for 1.5V gate drive voltage enabling direct drive from single-cell Lithium-ion battery or low-vo

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1.5V Drive Nch+SBD MOSFET ES6U2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET /

WEMT6

Schottky barrier diode

Features 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance.

3) Low voltage drive (1.5V drive). 4) Built-in Low VF schottky barrier diode.

Abbriviated symbol : U02

Applications Inner circuit Switching

Package specifications

Package Taping

Type Code T2R ∗2

Basic ordering unit (pieces)

(1)Gate

ES6U2

∗1 (2)Source (3)Anode (4)Cathode

(5)Drain

∗1 ESD protection diode

(6)Drain

∗2 Body diode

Absolute maximum ratings (Ta=25°C) <MOSFET>

Parameter Symbol Limits Unit

Drain-source voltage VVDSS

Gate-source voltage ±10 VVGSS Continuous ±1.5 AID

Drain current

Pulsed ±3.0 AIDP Source current Continuous 0.5 AIS

(Body diode) ∗1

Pulsed 3.0 AISP

°CTch Channel temperature

∗2PDPower dissipation W / ELEMENT0.7

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board

Parameter Symbol Limits Unit

Repetitive peak reverse voltage VVRM Reverse voltage VVR

Forward current 0.5 AIF

Forward current surge peak AIFSM Junction temperature Tj °C

∗2Power dissipation 0.5 W / ELEMENTPD

∗1 60Hz 1cyc. ∗2 Mounted on ceramic board

<MOSFET and Di>

Parameter Symbol Limits Unit

Power dissipation 0.8 W / TOTALPD

Range of storage temperature −55 to +150 °CTstg

∗ Mounted on a ceramic board

1/5 www.rohm.com 2009.12 - Rev.A

○c 2009 ROHM Co., Ltd. All rights reserved.

Page Summary Contents For ROHM ES6U2 Data Sheet User Manual

Page 1 1.5V Drive Nch+SBD MOSFET ES6U2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET / WEMT6 Schottky barrier diode Features 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. 2) ...
Page 2 Data Sheet ES6U2 Electrical characteristics (Ta=25°C) &lt;MOSFET&gt; Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS=±10V, VDS=0V Drain-source breakdown voltage V(B...
Page 3 Data Sheet ES6U2 ST AT IC AI -S -S TA TE ST AT IC AI -S -S TA TE ES IS TA : R S( on )[m ES IS TA : R S( on )[m Electrical characteristics curves AI EN : I [A VGS= 10V Ta=25°C Ta=25°C VDS= 10V VGS= 4.5...
Page 4 Data Sheet ES6U2 EV ER SE EN : I (A AT E- SO VO LT AG : V V] EV ER SE AI EN : I [A VGS=0V Ta=25°C Ta=25°C Pulsed Pulsed VDD= 10V td(off) VGS=4.5V ID= 0.8A RG=10Ω Pulsed ID= 1.5A Ta=125°C 0.1 Ta=75°C t...
Page 5 Data Sheet ES6U2 Measurement circuit Pulse Width VDS 90% RG VDD trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VGS Qg IG(Const.) D.U.T. Qgs Qgd RG V...
Page 6 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand ROHM
Pages 6
File Size 232.35 KB
Published June 22, 2026
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Frequently Asked Questions

What is the continuous drain current (Id) rating?

The continuous drain current range is -1.5 A to +1.5 A.

Under what voltage conditions can this MOSFET operate?

It can handle a maximum drain-source voltage (VDSS) of 20 V, and the gate-source voltage range is ±10 V.

Is there an ESD protection feature?

Yes, it includes built-in features like an ESD protection diode.

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