ROHM ES6U1 Data Sheet User Manual
Summary
The ES6U1 is a comprehensive P-channel MOSFET combined with an integrated Schottky barrier diode, engineered for high-speed, efficient inner circuit switching. Featuring low on-resistance and requiring only a 1.5V drive voltage, this component minimizes waste energy in power conversion systems. This manual provides detailed specifications, including absolute maximum ratings, performance curves, and electrical characteristics necessary for system designers building general electronic equipment and demanding switching circuits.
Page 1 Text Content
1.5V Drive Pch+SBD MOSFET ES6U1 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET /
WEMT6
Schottky barrier diode
Features 1) Pch MOSFET and schottky barrier diode are put in WEMT6 package.
2) High-speed switching, Low On-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in Low VF schottky barrier diode.
Abbreviated symbol : U01
Application Inner circuit Switching
Packaging specifications
Package Taping
Type Code T2R
(1) Gate ∗1 (2) Source
Basic ordering unit (pieces)
(3) Anode ES6U1 (1) (2) (3) (4) Cathode (5) Drain
∗1 ESD protection diode
(6) Drain
∗2 Body diode
Absolute maximum ratings (Ta=25°C) <MOSFET>
Parameter Symbol Limits Unit
Drain-source voltage −12 VVDSS Gate-source voltage ±10 VVGSS Continuous ±1.3 AID
Drain current
Pulsed ±2.6 AIDP Source current Continuous −0.5 AIS
(Body diode) ∗1
Pulsed −2.6 AISP °CTch Channel temperature
∗2PDPower dissipation W / ELEMENT0.7
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Parameter Symbol Limits Unit
Repetitive peak reverse voltage VVRM Reverse voltage VVR
Forward current 0.5 AIF
Forward current surge peak AIFSM Junction temperature Tj °C
∗2Power dissipation 0.5 W / ELEMENTPD
∗1 60Hz 1cycle ∗2 Mounted on a ceramic board
<MOSFET and Di>
Parameter Symbol Limits Unit
Power dissipation 0.8 W / TOTALPD
Range of storage temperature −55 to +150 °CTstg
∗ Mounted on a ceramic board
1/5 www.rohm.com 2009.10 - Rev.A
○c 2009 ROHM Co., Ltd. All rights reserved.
Page Summary Contents For ROHM ES6U1 Data Sheet User Manual
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 6 |
| File Size | 232.26 KB |
| Published | June 22, 2026 |
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Frequently Asked Questions
What is the required gate drive voltage for this MOSFET?
The device supports low voltage drive specifically at 1.5V.
How is the product packaged and ordered?
It uses T2R Package Taping, and the basic ordering unit is 8000 pieces.
What are the absolute maximum ratings for power dissipation with the MOSFET and diode combined?
The total package PD limits are 0.8 W.
What environment temperatures should be considered for storage?
The range of storage temperature (Tstg) is from -55 to +150°C.