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Radiation Hardened Quad 2-Input OR Gate Data Sheet

Summary

This Radiation Hardened Quad 2-Input OR Gate delivers high reliability using advanced CMOS/SOS technology. Ideal for mission-critical applications in aerospace and defense sectors that mandate performance under extreme conditions, including radiation exposure and wide temperature ranges (-55°C to +125°C). The comprehensive manual provides detailed electrical specifications, absolute maximum ratings, packaging details (SBDIP or Flatpack), and guidelines necessary for accurate system design and integration.

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查询HCTS32D供应商

HCTS32MS Radiation Hardened September 1995 Quad 2-Input OR Gate

Features Pinouts

3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP)

Total Dose 200K RAD (Si)

MIL-STD-1835 CDIP2-T14 TOP VIEW

SEP Effective LET No Upsets: >100 MEV-cm2/mg Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/Bit-Day A1 VCC (Typ)

Dose Rate Survivability: >1 x 1012 RAD (Si)/s

Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse A2 Y4

Latch-Up Free Under Any Conditions B2 B3

Military Temperature Range: -55o C to +125o C Y2 A3

GND Y3

Significant Power Reduction Compared to LSTTL ICs DC Operating Voltage Range: 4.5V to 5.5V

14 LEAD CERAMIC METAL SEAL

LSTTL Input Compatibility

FLATPACK PACKAGE (FLATPACK)

VIL = 0.8V Max

MIL-STD-1835 CDFP3-F14

VIH = VCC/2 Min TOP VIEW

Input Current Levels Ii ≤ 5µA @ VOL, VOH

1A1 VCC

B1 B4 Description Y1 A4 A2 Y4

The Intersil HCTS32MS is a Radiation Hardened Quad 2-Input OR

Gate. A Low on all inputs forces the output to a Low state.

The HCTS32MS utilizes advanced CMOS/SOS technology to

GND Y3

achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCTS32MS is supplied in a 14 lead Ceramic flatpack (K Functional Diagram suffix) or a SBDIP Package (D suffix).

An (1, 4, 9, 12)

Ordering Information

PART TEMPERATURE SCREENING (3, 6, 8, 11) NUMBER RANGE LEVEL PACKAGE

HCTS32DMSR -55o C to +125o C Intersil Class 14 Lead SBDIP

S Equivalent

HCTS32KMSR -55o C to +125o C Intersil Class 14 Lead

TRUTH TABLE

S Equivalent Ceramic

Flatpack INPUTS OUTPUTS

HCTS32D/ +25o C Sample 14 Lead SBDIP An Bn Yn Sample

HCTS32K/ +25o C Sample 14 Lead Sample Ceramic

Flatpack

HCTS32HMSR +25o C Die Die

NOTE: L = Logic Level Low, H = Logic level High

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Spec Number

http://www.intersil.com or 407-727-9207 Copyright © Intersil Corporation 1999

File Number 2248.2

Page Summary Contents For Radiation Hardened Quad 2-Input OR Gate Data Sheet

Page 1 查询HCTS32D供应商 HCTS32MS Radiation Hardened September 1995 Quad 2-Input OR Gate Features Pinouts 3 Micron Radiation Hardened SOS CMOS 14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) Total Dose 20...
Page 2 Specifications HCTS32MS Absolute Maximum Ratings Reliability Information Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to +7.0V Thermal Resistance θJA θJC Input Voltage ...
Page 3 Specifications HCTS32MS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP LIMITS (NOTES 1, 2) A SUB- PARAMETER SYMBOL CONDITIONS GROUPS TEMPERATURE MAX UNITSMIN Input to Output TPHL VCC = 4.5V ...
Page 4 Specifications HCTS32MS TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) 200K RAD LIMITS (NOTES 1, 2) PARAMETER SYMBOL CONDITIONS TEMPERATURE MAX UNITSMIN Noise Immunity F...
Page 5 Specifications HCTS32MS TABLE 7. TOTAL DOSE IRRADIATION TEST READ AND RECORD CONFORMANCE GROUPS METHOD PRE RAD POST RAD PRE RAD POST RAD Group E Subgroup 2 1, 7, 9 Table 4 1, 9 Table 4 (Note 1) NOTE: ...
Page 6 HCTS32MS Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 100% Interim Electrical Test 1 (T1) (Includes SEM) 100% Delta Calculation (T0-T1) GAMMA Radiation Verifica...
Page 7 HCTS32MS AC Timing Diagrams AC Load Circuit VIH DUT TEST POINT VS INPUT CL RL VS OUTPUT CL = 50p F VOL RL = 500Ω TTLH TTHL 20% OUTPUT 20% AC VOLTAGE LEVELS PARAMETER HCTS UNITS VCC 4.50 VIH 3.00 VS 1....
Page 8 HCTS32MS Die Characteristics DIE DIMENSIONS: 87 x 88 mils 2.20 x 2.2mm METALLIZATION: Type: Si Al Metal Thickness: 11kÅ 1kÅ GLASSIVATION: Type: Si O2 Thickness: 13kÅ ± 2.6kÅ WORST CASE CURRENT DENSITY...
Page 9 HCTS32MS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation re...

Manual Details

Brand QUAD
Pages 9
File Size 57.67 KB
Published May 27, 2026
48 views

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Frequently Asked Questions

What is the recommended operating voltage range?

The device operates within a VCC range of 4.5V to 5.5V.

Are there specific warnings regarding handling this IC?

Yes, these devices are sensitive to electrostatic discharge (ESD); proper IC Handling Procedures must be followed.

In what package types is the HCTS32MS available?

It can be supplied in a Ceramic Flatpack (K suffix) or an SBDIP Package (D suffix).

What are the extreme temperature limitations?

The operational temperature range is -55°C to +125°C, with a storage range of -65°C to +150°C.