Philips PBSS5160T 60V, 1A PNP Low VCEsat (BISS) Transistor Data Manual / Specification Sheet
Summary
Product specification for the Philips PBSS5160T 60V, 1A PNP low collector-emitter saturation voltage BISS transistor in SOT23 surface-mount plastic package, published May 2004. Features high collector current capability up to 2A peak, low equivalent on-resistance of 330 milliohms, and NPN complement PBSS4160T. Designed for automotive, telecom infrastructure, and industrial applications including DC-DC conversion, supply line switching, and peripheral driving of lamps, LEDs, relays, buzzers, and
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DATA SHEET book, halfpage
PBSS5160T 60 V, 1 A PNP low VCEsat (BISS) transistor Product specification May Supersedes data of 2003 Jun 23
Page Summary Contents For Philips PBSS5160T 60V, 1A PNP Low VCEsat (BISS) Transistor Data Manual / Specification Sheet
Manual Details
| Brand | Philips |
|---|---|
| Pages | 10 |
| File Size | 97.61 KB |
| Published | June 16, 2026 |
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Frequently Asked Questions
What is the maximum collector current capability of this transistor?
The maximum DC collector current (I_C) is 1 A.
What is the total power dissipation limit when mounted on a standard FR4 PCB?
Under normal conditions, the maximum total power dissipation (P_tot) is 200 mW.
For what major application segments is this PNP transistor primarily designed?
Major applications include Automotive (base), Telecom infrastructure (emitter), and Industrial (collector).
What are the allowable voltage ratings for the collector-emitter voltage?
The maximum permissible collector-emitter voltage (V_CEO) is -60 V.