Philips PBSS5480X 80 V, 4 A PNP low VCEsat (BISS) Transistor Data Manual
Summary
This datasheet documents the Philips PBSS5480X PNP low VCEsat (BISS) transistor rated for -80V collector-emitter voltage and -4A continuous DC collector current with -10A peak capability in a SOT89 (SC-62) surface-mount plastic package. The BISS technology delivers high current gain and low saturation voltage at high current operation, achieving an equivalent on-resistance of just 75mΩ for high efficiency with reduced heat generation. The NPN complement is the PBSS4480X. Key specifications inclu
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PBSS5480X 80 V, 4 A PNP low VCEsat (BISS) transistor Product specification 2004 Nov 08 Supersedes data of 2004 Jun 8
Page Summary Contents For Philips PBSS5480X 80 V, 4 A PNP low VCEsat (BISS) Transistor Data Manual
Manual Details
| Brand | Philips |
|---|---|
| Pages | 13 |
| File Size | 100.20 KB |
| Published | July 06, 2026 |
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Frequently Asked Questions
What are the maximum general operating voltages for this PNP transistor?
The collector-base voltage (CBO) is rated up to -80 V, and the collector-emitter voltage (CEO) is also Up to -80 V.
How does the power dissipation change based on PCB mounting?
Lower thermal resistance values are achieved when using a larger collector pad; for example, a 7 cm ceramic board offers the lowest resistance at ambient temperatures.
What is the peak collector current rating and duration?
The maximum instantaneous (I_CM) peak collector current is -10 A, achievable for 1 ms.
Which transistor model is the NPN complement to PBSS5480X?
The complementary NPN model available is PBSS4480X.