Philips PBSS5350T 50V, 3A PNP low VCEsat (BISS) Transistor Data Manual
Summary
Philips PBSS5350T 50V 3A PNP low VCEsat (BISS) transistor data sheet provides complete specifications for this high-efficiency switching transistor in SOT-23 package. Features low collector-emitter saturation voltage with 135mΩ equivalent on-resistance, 2A continuous collector current capability, and high current gain for improved power efficiency. Includes limiting values, thermal characteristics, electrical characteristics, and package dimensions. Ideal for power management, DC/DC converters, battery chargers, and low-dropout voltage regulation applications.
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DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS5350T V, 3 PNP low VCEsat (BISS) transistor Product specification Jan Supersedes data of 2002 Aug
Page Summary Contents For Philips PBSS5350T 50V, 3A PNP low VCEsat (BISS) Transistor Data Manual
Manual Details
| Brand | Philips |
|---|---|
| Pages | 10 |
| File Size | 73.56 KB |
| Published | June 18, 2026 |
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Frequently Asked Questions
What is this transistor suited for?
It is designed for power management applications, DC/DC converters, and supply line switching circuits.
How efficient is the PBSS5350T in operation?
Its key advantage is a low collector-emitter saturation voltage (VceSat), resulting in improved efficiency and reduced heat generation.
What are the acceptable temperature ranges for use?
The junction operating temperature range is from -150°C to +150°C, while ambient operation requires temperatures between -65°C and +150°C.
What type of physical package and footprint does it use?
The component is provided in a surface-mounted SOT23 plastic package with three leads.