Philips PBSS9110T 100 V, 1 A PNP low VCEsat (BISS) Transistor Data Manual
Summary
Discover detailed specifications for the PBSS9110T NPN low V transistor, housed in a compact SOT-23 package. This comprehensive manual provides critical electrical data, including maximum ratings, saturation voltages, and current capabilities, along with thermal characteristics needed for reliable circuit design. It is essential reading for electronics engineers and designers tackling low-voltage applications like peripheral drivers, DC-to-DC conversion circuits, or LED/lamp control systems requiring high efficiency and minimal heat generation.
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PBSS9110T 100 V, 1 A PNP low VCEsat (BISS) transistor Product specification 2004 May 13 Supersedes data of 2004 May 06
Page Summary Contents For Philips PBSS9110T 100 V, 1 A PNP low VCEsat (BISS) Transistor Data Manual
Manual Details
| Brand | Philips |
|---|---|
| Pages | 12 |
| File Size | 96.74 KB |
| Published | July 16, 2026 |
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Frequently Asked Questions
What is the low collector-emitter saturation voltage (VCEsat)?
The device has a VCeSat of -120 mV, measured at an $I_{C}$ of -250 mA.
What common application segments are suitable for this chip?
It is used in Automotive and Telecom infrastructure, specifically for DC-to-DC conversion and Peripheral drivers.
Which model number is the complementary NPN counterpart?
The NPN complement to PBSS9110T is PBSS8110T.
How does mounting affect thermal dissipation?
Power derating curves show different ratings based on mounting; using a 1 cm collector pad significantly improves performance.