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Philips PBSS8110X 100V, 1A NPN Low VCEsat (BISS) Transistor Data Manual

Summary

100V, 1A NPN low VCEsat (BISS) transistor in SOT89 package for automotive and industrial switching. The Philips PBSS8110X features low saturation with 165mohm RCEsat at 1A, enabling high efficiency and reduced heat. Handles 100V with 1A continuous, 3A peak. PNP complement: PBSS9110X. Applications: automotive 42V, telecom, industrial, drivers for lamps, LEDs, relays, motors, DC-DC converters. SOT89 collector pad enhances heat transfer. Targeted at automotive and industrial circuit designers.

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查询PBSS8110X-1供应商

PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 — 11 May 2005 Product data sheet

1. Product profile

1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: PBSS9110X.

1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High efficiency leading to less heat generation

1.3 Applications Major application segments:

Automotive 42 V power Telecom infrastructure Industrial Peripheral driver: Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) DC-to-DC converter

1.4 Quick reference data Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base IC collector current (DC) ICM peak collector current single pulse;

tp ms

RCEsat collector-emitter IC A; mΩ saturation resistance IB m A

[1] Pulse test: tp ≤ 300 µs; ≤ 0.02.

Page Summary Contents For Philips PBSS8110X 100V, 1A NPN Low VCEsat (BISS) Transistor Data Manual

Page 1 查询PBSS8110X-1供应商 PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 — 11 May 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (...
Page 2 Philips Semiconductors PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor 2. Pinning information Table 2: Pinning Pin Description Simplified outline Symbol emitter collector sym042 3. Ordering info...
Page 3 Philips Semiconductors PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Param...
Page 4 Philips Semiconductors PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal r...
Page 5 Philips Semiconductors PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor 006aaa411 Zth(j-a) (K/W) duty cycle = tp (s) FR4 PCB; mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance f...
Page 6 Philips Semiconductors PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Ma...
Page 7 Philips Semiconductors PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa497 001aaa495 VBE (m V) IC (m A) IC (m A) VCE = VCE (1) Tamb = 100 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 2...
Page 8 Philips Semiconductors PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa506 001aaa498 VBEsat (m V) VCEsat (m V) IC (m A) IC (m A) IC/IB = 50; Tamb = 25 °C IC/IB = (1) Tamb = −55 °C (2) Tamb...
Page 9 Philips Semiconductors PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor 001aaa502 001aaa503 RCEsat RCEsat (Ω) (Ω) IC (m A) IC (m A) IC/IB = 20; Tamb = 25 °C IC/IB = 50; Tamb = 25 °C Fig 13. Colle...
Page 10 Philips Semiconductors PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor 8. Test information 90 % input pulse (idealized waveform) IBon (100 %) IBoff output pulse IC (idealized waveform) IC (100 %...
Page 11 Philips Semiconductors PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor 9. Package outline 04-08-03Dimensions in mm Fig 18. Package outline SOT89 (SC-62/TO-243) 10. Packing information Table 8: P...
Page 12 Philips Semiconductors PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor 11. Soldering solder lands solder resist occupied area solder paste msa442 Reflow soldering is the only recommended solderi...
Page 13 Philips Semiconductors PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor 13. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Doc. number Superse...
Page 14 Philips Semiconductors PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor 14. Data sheet status Level Data sheet status Product status Definition Objective data Development This data sheet contains...
Page 15 Philips Semiconductors PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor 19. Contents Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 General description. . . . . . . . . ....

Manual Details

Brand Philips
Pages 15
File Size 124.43 KB
Published July 04, 2026
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Frequently Asked Questions

What is the max DC collector current of PBSS8110X?

The maximum DC collector current is 1 A.

What package does PBSS8110X use?

It uses the SOT89 (SC-62) SMD plastic package.

What are typical applications for this transistor?

Automotive 42V power, telecom, industrial, LED/lamp drivers, relay drivers, and DC-DC converters.

What is the peak collector current rating?

3 A for a single pulse up to 1 ms duration.