Philips PBSS8110T 100V, 1ANPN Low VCEsat (BISS) Transistor Data Manual
Summary
The PBSS8110T is an NPN low V (BISS) power transistor housed in a compact SOT23 package. This comprehensive datasheet provides detailed electrical specifications, thermal performance data, and operational guidelines for reliable integration. It covers critical characteristics such as saturation voltage, current handling capacity, and dissipation limits under various mounting conditions. Ideal for engineers designing circuits requiring high efficiency and robust stability in applications including automotive power management, telecom infrastructure, DC/DC converters, battery charging systems, and peripheral driving (e.g., LEDs and relays).
Page 1 Text Content
查询PBSS8110T供应商
DISCRETE SEMICONDUCTORS
DATA SHEET book, halfpage
PBSS8110T 100 V, 1 A NPN low VCEsat (BISS) transistor Product specification Dec Supersedes data of 2003 Jul 28
Page Summary Contents For Philips PBSS8110T 100V, 1ANPN Low VCEsat (BISS) Transistor Data Manual
Manual Details
| Brand | Philips |
|---|---|
| Pages | 12 |
| File Size | 123.02 KB |
| Published | June 22, 2026 |
Enter the captcha to get the download link:
Frequently Asked Questions
What are the primary applications for this NPN transistor?
Applications include automotive (42 V power), telecom infrastructure, power management (DC/DC converters), and peripheral drivers.
What is the maximum repetitive peak collector current (I_CM)?
The maximum repetitive peak collector current is 3 A.
How is thermal performance affected by mounting?
For single-sided copper PCB, the total power dissipation (Ptot) is rated at 300 mW, while with a 1 cm copper mounting pad for the collector, it is 400 mW.
What is the low collector-emitter saturation voltage (V_Cesat)?
The nominal V_Cesat is approximately 200 mΩ when collecting 1 A.
Is there a PNP complement available?
Yes, the PNP complement specified is PBSS9110T.