Philips PBSS4160T NPN Low VCEsat (BISS) Transistor Data Manual

Summary

This datasheet provides complete technical specifications for the PBSS4160T, a 60V, 1A NPN low VCEsat (BISS) transistor in a SOT23 surface-mount package. It details electrical characteristics, thermal ratings, and application notes for power management, DC-DC conversion, supply line switching, and peripheral driving in automotive, telecom, and industrial designs.

📄 Preview ‹ PAGE OF 10 ›

‹

Philips PBSS4160T NPN Low VCEsat (BISS) Transistor Data Manual - Page 1

›

Page 1 Text Content

查询PBSS4160T供应商

DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

PBSS4160T 60 V, 1 A NPN low VCEsat (BISS) transistor Product specification May Supersedes data of 2003 Jun 24

Page Summary Contents For Philips PBSS4160T NPN Low VCEsat (BISS) Transistor Data Manual

Page 1 查询PBSS4160T供应商 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage PBSS4160T 60 V, 1 A NPN low VCEsat (BISS) transistor Product specification May Supersedes data of 2003 Jun 24

Page 2 Philips Semiconductors Product specification PBSS4160T NPN low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High co...

Page 3 Philips Semiconductors Product specification PBSS4160T NPN low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS M...

Page 4 Philips Semiconductors Product specification PBSS4160T NPN low VCEsat (BISS) transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth(j-a) thermal resistance from junction to in f...

Page 5 Philips Semiconductors Product specification PBSS4160T NPN low VCEsat (BISS) transistor CHARACTERISTICS Tamb °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collect...

Page 6 Philips Semiconductors Product specification PBSS4160T NPN low VCEsat (BISS) transistor MLE135 MLE104 handbook, halfpage handbook, halfpage VCEsat (V) VCEsat (V) IC (m A) IC (m A) IC/IB 10. IC/IB 20. ...

Page 7 Philips Semiconductors Product specification PBSS4160T NPN low VCEsat (BISS) transistor MLE131 MLE132 handbook, halfpage (2)(3)(4)(5)(6) (1) handbook, halfpage RCEsat VCE (V) IC (m A) Tamb °C. (1) IB ...

Page 8 Philips Semiconductors Product specification PBSS4160T NPN low VCEsat (BISS) transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 e1 bp Lp detail X scale DIMENSIONS (mm are the or...

Page 9 Philips Semiconductors Product specification PBSS4160T NPN low VCEsat (BISS) transistor DATA SHEET STATUS DATA SHEET PRODUCT LEVEL DEFINITION STATUS(1) STATUS(2)(3) Objective data Development This dat...

Page 10 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 For sales offices addresses send e-mail to: sal...

Manual Details

Brand	Philips
Pages	10
File Size	99.54 KB
Published	June 17, 2026

4 views

Enter the captcha to get the download link:

Frequently Asked Questions

What are the primary application segments for this transistor?

Major applications include Automotive (42 V power), Telecom infrastructure, and Industrial power management.

How is the device packaged and mounted on a circuit board?

It comes in a SOT23 plastic package. Mounting options include standard footprint or using a 1 cm collector mounting pad.

What are the thermal limitations when operating under pulsed conditions?

The total power dissipation (P tot) varies based on mounting and pulse time, requiring calculated derating according to the provided curves.

What is the rated peak collector current capability (I peak)?

Under steady-state conditions, the I peak collector current (t = 1 ms) is listed as 2 A max.