Panasonic MA3V175E, MA3V176E User's Manual and Specifications

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Switching Diodes

MA3V175E, MA3V176E (MA175WK, MA176WK) Silicon epitaxial planar type

Unit : mm

For switching circuits 4.0±0.2 2.0±0.2

Features 0.75 max.

Short reverse recovery time trr Small terminal capacitance, Ct

Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit

Reverse voltage MA3V175E VR

(DC) MA3V176E

Peak reverse MA3V175E VRM 0.7±0.1

voltage MA3V176E

1 : Anode Forward current Single IF m A 2 : Cathode 3 : Anode

(DC) Double

NS-B1 Package

Peak forward Single IFM m A

Internal Connection

current Double

Non-repetitive peak Single IFSM m A

forward surge current* Double

Junction temperature Tj °C

Storage temperature Tstg −55 to +150 °C 3. 0± 0.

Note) t = 1 s

Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) MA3V175E IR VR = 35 V 0.1 µA

MA3V176E VR = 75 V 0.1

Forward voltage (DC) VF IF = 100 m A 1.2 Reverse voltage (DC) MA3V175E VR IR = 100 µA

MA3V176E

Terminal capacitance Ct VR = 0 V, f = 1 MHz p F Reverse recovery time* trr IF = 10 m A, VR = 6 V ns

Irr = 0.1 · IR, RL = 100Ω

Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit

DUT Input Pulse Output Pulse

tr t P

IF010%

Sampling Oscilloscope

Ri = 50 Ω 90% Irr = 0.1·IR

Rs = 50 Ω tp = 100 ns IF = 10 m A V = VR + IR·RS tr = 0.6 ns VR = 6 V

δ = 0.05 RL = 100 Ω

Note) The part numbers in the parenthesis show conventional part number.