Panasonic 2SJ0164 (2SJ164) User Manual and Specifications

查询2SJ0164供应商 Silicon Junction FETs (Small Signal)

2SJ0164 (2SJ164) Silicon P-Channel Junction FET For switching

unit: mm

Complementary to 2SK1104

Features

Low ON-resistance 0.75 max.

Low-noise characteristics

Absolute Maximum Ratings (Ta = 25°C) Parameter Symbol Ratings Unit

+0.20 Gate to Drain voltage VGDS 0.45 –0.10

Drain current ID −20 m A

Gate current IG −10 m A Allowable power dissipation PD m W 1: Source

2: Gate

Channel temperature Tch °C

3: Drain

Storage temperature Tstg −55 to +150 °C NS-B1 Package

Electrical Characteristics (Ta = 25°C)

Parameter Symbol Conditions min typ max Unit (0 .8 (0 .8

Drain to Source cut-off current IDSS VDS = −10V, VGS = 0 − 0.2 −6 m A 7.

Gate to Source leakage current IGSS VGS = 30V, VDS = 0 n A Gate to Drain voltage VGDS IG = 10µA, VDS = 0 Gate to Source cut-off voltage VGSC VDS = −10V, ID = −10µA 1.5 3.5 Forward transfer admittance | Yfs | VDS = −10V, ID = −1m A, f = 1k Hz 1.8 2.5 m S Drain to Source ON-resistance RDS(on) VDS = −10m V, VGS = 0

Input capacitance (Common Source) Ciss p F Output capacitance (Common Source) Coss VDS = −10V, VGS = 0, f = 1MHz p F Reverse transfer capacitance (Common Source) Crss p F

* IDSS rank classification

Runk IDSS (m A) − 0.2 to −1 − 0.6 to −1.5 −1 to −3 −2.5 to −6

Note) The part number in the parenthesis shows conventional part number.