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Panasonic 2SA0879 (2SA879) User Manual and Specifications

Summary

This detailed technical manual provides comprehensive specifications for high-performance power transistors essential for electronic amplification circuits. It covers absolute maximum ratings, key electrical characteristics—including collector current and saturation voltage—and critical safe operational guidelines. This resource is indispensable for electrical engineers and product designers building general or industrial equipment, ensuring optimal component selection and reliable performance in demanding applications.

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Transistors

2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Unit: mm

Complementary to 2SC1573

Features High collector-emitter voltage (Base open) VCEO

Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −250

Collector-emitter voltage (Base open) VCEO −200 0.45+0.2 –0.1

Emitter-base voltage (Collector open) VEBO −5 (1.27)(1.27)

1 : Emitter

Collector current IC −70 m A 2 : Collector

3 : Base

Peak collector current ICP −100 m A

EIAJ : SC-51

Collector power dissipation PC TO-92L-A1 Package Junction temperature Tj °C Storage temperature Tstg −55 to +150 °C

Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector-emitter voltage (Base open) VCEO IC = −100 µA, IB = 0 −200 Emitter-base voltage (Collector open) VEBO IE = −1 µA, IC = 0 −5 Forward current transfer ratio * h FE VCE = −10 V, IC = −5 m A Collector-emitter saturation voltage VCE(sat) IC = −50 m A, IB = −5 m A −1.5 Transition frequency f T VCB = −10 V, IE = 10 m A, f = 200 MHz MHz Collector output capacitance Cob VCB = −10 V, IE = 0, f = 1 MHz p F (Common base, input open circuited) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Rank classification

Rank h FE 60 to 150 100 to 220

Note) The part number in the parenthesis shows conventional part number.

SJC00006BED 1Publication date: November 2002

Page Summary Contents For Panasonic 2SA0879 (2SA879) User Manual and Specifications

Page 1 Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Unit: mm Complementary to 2SC1573 Features High collector-emitter voltage (Base open) VCEO Absolute Maximum Rat...
Page 2 2SA0879 Fo rw ar cu rr en t t ra ns fe ra tio FE as cu rr en ol le ct or ow er is si pa tio PC  Ta IC  VCE IC  IB Ta = 25°C VCE = −10 V Ta = 25°C IB = −2 m A ra ns iti on re qu en cy z) ol le ct or...
Page 3 2SA0879 IEBO  Ta ICBO  Ta Safe operation area VEB = −5 V VCB = −250 V Single pulse Ta = 25°C ICP −100 t = 10 ms Ambient temperature Ta (°C) Ambient temperature Ta (°C) Collector-emitter voltage VCE ...
Page 4 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authori...

Manual Details

Brand Panasonic
Pages 4
File Size 92.97 KB
Published June 04, 2026
27 views

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Frequently Asked Questions

What types of applications should I check with your sales staff before using this component?

You must consult our sales staff for special applications such as airplanes, aerospace, automobiles, or life support systems where exceptional reliability is required.

Where are the absolute maximum temperature and voltage ratings listed?

The Absolute Maximum Ratings define parameters like Collector power dissipation ($P$) limits (1W) and storage temperatures ($T_{stg}$) ranging from -55 to +150°C.

What design precautions must be considered when building a circuit with this component?

Users must comply with guaranteed values, particularly maximum ratings, and take measures like redundant design to mitigate potential failures.

How do I ensure that the specifications provided in this manual are up-to-date for my project?

Before final design, purchasing, or use, always ask for the most up-to-date Product Standards to confirm current requirements.