Motorola MMSF3P03HD Data Manual (1) User Guide

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SEMICONDUCTOR TECHNICAL DATA by MMSF3P03HD/D

Medium Power Surface Mount Products

Motorola Preferred Device

SINGLE TMOS POWER FET

Mini MOS devices are an advanced series of power MOSFETs

3.0 AMPERES

which utilize Motorola’s High Cell Density HDTMOS process.

30 VOLTS

These miniature surface mount MOSFETs feature ultra low RDS(on)

RDS(on) = 0.1 OHM

and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. Mini MOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for

CASE 751–05, Style 13

low voltage motor controls in mass storage products such as disk

drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.

N–C Drain

Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life

Source Drain

Logic Level Gate Drive — Can Be Driven by Logic ICs

Source Drain

Miniature SO–8 Surface Mount Package — Saves Board Space

Gate Drain

Diode Is Characterized for Use In Bridge Circuits Diode Exhibits High Speed, With Soft Recovery

Top View

IDSS Specified at Elevated Temperature Avalanche Energy Specified Mounting Information for SO–8 Package Provided MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)(1)

Rating Symbol Value Unit

Drain–to–Source Voltage VDSS Vdc Drain–to–Gate Voltage (RGS = 1.0 MΩ) VDGR Vdc Gate–to–Source Voltage — Continuous VGS Vdc Drain Current — Continuous @ TA = 25°C ID 4.6 Adc

Drain Current — Continuous @ TA = 100°C ID 3.0 Drain Current — Single Pulse (tp ≤ 10 µs) IDM Apk

Total Power Dissipation @ TA = 25°C (2) PD 2.5 Watts Operating and Storage Temperature Range 55 to 150 °C Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C EAS m J (VDD = 20 Vdc, VGS = 5.0 Vdc, IL = 9.0 Apk, L = 14 m H, RG = 25 Ω) Thermal Resistance — Junction to Ambient (2) RθJA °C/W Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL °C DEVICE MARKING S3P03 (1) Negative signs for P–Channel device omitted for clarity. (2) Mounted on 2” square FR4 board (1” sq. 2 oz. Cu 0.06” thick single sided), 10 sec. max.

ORDERING INFORMATION

Device Reel Size Tape Width Quantity MMSF3P03HDR2 13″ 12 mm embossed tape 2500 units Designer’s Data for “Worst Case” Conditions The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate “worst case” design. Designer’s, HDTMOS and Mini MOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. REV 5

1Motorola TMOS Power MOSFET Transistor Device Data

 Motorola, Inc. 1996