Fairchild MMBF5103 N-Channel Switch Data Handbook

MMBF5103

N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. See J111 for characteristics.

SOT-23 Mark: 66A

1. Drain 2. Source 3. Gate

Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Value Units

VDG Drain-Gate Voltage

VGS Gate-Source Voltage -40 IGF Forward Gate Current m A TJ, TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)GSS Gate-Source Breakdown Voltage IG = 1.0µA, VDS = 0 -40

IGSS Gate Reverse Current VGS = -15V, VDS = 0 -200 p A VGS = -15V, VDS = 0, Ta = 125°C -500 n A

VGS(off) Gate-Source Cutoff Voltage VDS = 20V, ID = 1.0n A -1.2 -2.7 VGS(f) Gate-Source Forward Voltage IG = 1.0m A, VDS = 0 1.0 On Characteristics IDSS Zero-Gate Voltage Drain Current * VDS = 15V, VGS = 0 m A Small Signal Characteristics CISS Input Capacitance VDS = 15V, VGS = 0, f = 1.0MHz p F Crss Reverse Transfer Capacitance VGS = -15V, f = 1.0MHz 6.0 p F * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 1.0%

Thermal Characteristics Ta=25°C unless otherwise noted Symbol Parameter Max. Units PD Total Device Dissipation m W

Derate above 25°C 2.8 m W/°C RθJA Thermal Resistance, Junction to Ambient °C/W

©2003 Fairchild Semiconductor Corporation Rev. A, September 2003