Fairchild FQP3N80C FQPF3N80C - 800V N-Channel MOSFET Data Manual

FQ P3N 80C /FQ PF3N 80C

FQP3N80C/FQPF3N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.0A, 800V, RDS(on) = 4.8Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 13 n C) planar stripe, DMOS technology. Low Crss ( typical 5.5 p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the

Improved dv/dt capability

avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

TO-220 TO-220F

SD SD

FQP Series G FQPF Series

Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP3N80C FQPF3N80C Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 3 *

- Continuous (TC = 100°C) 1.9 1.9 *

IDM Drain Current - Pulsed (Note 1) 12 * VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) 10.7 m J

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (TC = 25°C)

- Derate above 25°C 0.85 0.31 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

TL °C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics Symbol Parameter FQP3N80C FQPF3N80C Units RθJC Thermal Resistance, Junction-to-Case 1.17 3.2 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W

©2003 Fairchild Semiconductor Corporation Rev. A, April 2003