Fairchild FQP13N50C FQPF13N50C User Manual and Specifications
Summary
This high-performance N-Channel MOSFET is engineered for demanding power electronics applications requiring reliable switching and minimal energy loss. Featuring low gate charge, fast switching capabilities, and superior avalanche resistance, this device excels in building highly efficient switched mode power supplies, active power factor correction systems, and electronic lamp ballasts (half bridge topology). The comprehensive datasheet provides detailed electrical characteristics, thermal data, and absolute maximum ratings necessary for engineers designing next-generation high-power conversion circuits.
Page 1 Text Content
FQ P13N 50C /FQ PF13N 50C
FQP13N50C/FQPF13N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 13A, 500V, RDS(on) = 0.48Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, Low gate charge ( typical 43 n C) planar stripe, DMOS technology. Low Crss ( typical 20p F) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the
Improved dv/dt capability
avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
TO-220 TO-220F
SD SD
FQP Series G FQPF Series
Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP13N50C FQPF13N50C Units VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) 13 *
- Continuous (TC = 100°C) 8 *
IDM Drain Current - Pulsed (Note 1) 52 * VGSS Gate-Source Voltage ± 30 EAS Single Pulsed Avalanche Energy (Note 2) m J IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) 19.5 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 1.56 0.39 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
Maximum lead temperature for soldering purposes,
TL °C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics Symbol Parameter FQP13N50C FQPF13N50C Units RθJC Thermal Resistance, Junction-to-Case 0.64 2.58 °C/W RθJS Thermal Resistance, Case-to-Sink Typ. 0.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W
©2003 Fairchild Semiconductor Corporation Rev. A, April 2003
Page Summary Contents For Fairchild FQP13N50C FQPF13N50C User Manual and Specifications
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 10 |
| File Size | 887.69 KB |
| Published | July 07, 2026 |
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Frequently Asked Questions
What are the continuous drain current ratings at different temperatures?
The continuous drain current (IDSS) for FQP13N50C/FQPF13N50C is 13A at 25°C and reduces to 8.8A at 100°C.
What applications are these MOSFETs well suited for?
They are suitable for high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half-bridge topology.
How is the thermal resistance measured?
The datasheet specifies junction-to-case (θJC) at 0.64 °C/W for FQP13N50C and 2.58 °C/W for FQPF13N50C.
What is the recommended maximum operational temperature range?
The operating and storage temperature range is -55 to +150 °C.