Fairchild FDD6N50 FDU6N50 User Guide and Specifications
Summary
These high-performance 500V N-Channel MOSFETs are advanced power transistors designed for highly efficient switched mode power supplies and active power factor correction (PFC) applications. This comprehensive manual provides everything needed to select and integrate the device, covering detailed electrical characteristics, absolute maximum ratings, thermal data, switching performance curves, and packaging information (D-PAK/I-PAK). Ideal for engineers requiring reliable low-loss operation in demanding power electronics designs.
Page 1 Text Content
FD 6N 50/FD 6N 50 500V N -C hannel M SFET
January 2006
Uni FET
FDD6N50/FDU6N50 500V N-Channel MOSFET Features Description 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect
Low gate charge ( typical 12.8 n C) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
Low Crss ( typical 9 p F)
Fast switching This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching
100% avalanche tested
performance, and withstand high energy pulse in the avalanche
Improved dv/dt capability
and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D-PAK I-PAK
FDD Series SDG FDU Series
Absolute Maximum Ratings Symbol Parameter FDD6N50/FDU6N50 Unit VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) 3.8
IDM Drain Current - Pulsed (Note 1)
VGSS Gate-Source voltage ±30
EAS Single Pulsed Avalanche Energy (Note 2) m J
IAR Avalanche Current (Note 1)
EAR Repetitive Avalanche Energy (Note 1) 8.9 m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C 0.71 W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics Symbol Parameter Min. Max. Unit RθJC Thermal Resistance, Junction-to-Case 1.4 °C/W RθJA Thermal Resistance, Junction-to-Ambient °C/W
©20 06 Fairchild Semiconductor Corporation www.fairchildsemi.com FD D6N50/FDU6N50 REV. A
Page Summary Contents For Fairchild FDD6N50 FDU6N50 User Guide and Specifications
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 9 |
| File Size | 851.17 KB |
| Published | June 20, 2026 |
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Frequently Asked Questions
What is the maximum Drain-Source Voltage (VDS) rating?
The absolute maximum drain-source voltage is 500 V.
How much continuous drain current can it handle at 25°C and 100°C?
At 25°C, the continuous drain current (DC) is 6 A; at 100°C, it reduces to 3.8 A.
What type of applications are these MOSFETs suited for?
They are well suited for high-efficiency switched mode power supplies and active power factor correction.
What is the typical static on-resistance (DS(on)) at V=10V, I=3A?
The manufacturer specifies a typical DS(on) of 0.9 Ω.
Does this component have built-in protection against overvoltage surges?
It offers 100% avalanche tested performance and can withstand high energy pulses in the avalanche mode.