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Fairchild FDD3682 Product Specifications Manual

Summary

The FDD3682 is a high-performance N-Channel PowerTrench MOSFET engineered for demanding automotive applications, rated up to 100V and 32A. Ideal for critical power management systems, it serves as a reliable primary switch in DC/DC converters, Off-Line UPS, and Distributed Power Architectures. This manual provides comprehensive technical specifications, including detailed electrical characteristics, dynamic switching analyses, and thermal derating curves, ensuring users can select the perfect component for rigorous applications compliant with AEC Q101 standards.

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Page 1 Text Content

September 2002

FDD3682 N-Channel Power Trench® MOSFET 100V, 32A, 36mΩ Features Applications r DS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A DC/DC converters and Off-Line UPS Qg(tot) = 18.5n C (Typ.), VGS = 10V

Distributed Power Architectures and VRMs

Low Miller Charge

Primary Switch for 24V and 48V Systems

Low QRR Body Diode

High Voltage Synchronous Rectifier

UIS Capability (Single Pulse and Repetitive Pulse)

Direct Injection / Diesel Injection System

Qualified to AEC Q101

Formerly developmental type 82755 42V Automotive Load Control

Electronic Valve Train System

DRAIN (FLANGE)

SOURCE

TO-252AA FDD SERIES

MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage VGS Gate to Source Voltage ±20

Drain Current

AContinuous (TC = 25o C, VGS = 10V)

ID Continuous (TC = 100o C, VGS = 10V)

Continuous (Tamb = 25o C, VGS = 10V, RθJA = 52o C/W) 5.5 Pulsed Figure 4

EAS Single Pulse Avalanche Energy (Note 1) m J

Power dissipation

Derate above 25o C 0.63 W/o C

TJ, TSTG Operating and Storage Temperature -55 to 175

Thermal Characteristics

RθJC Thermal Resistance Junction to Case TO-252 1.58

RθJA Thermal Resistance Junction to Ambient TO-252

RθJA Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a

copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

certification.

2002 Fairchild Semiconductor Corporation FDD3682 Rev. B

Page Summary Contents For Fairchild FDD3682 Product Specifications Manual

Page 1 September 2002 FDD3682 N-Channel Power Trench® MOSFET 100V, 32A, 36mΩ Features Applications r DS(ON) = 32mΩ (Typ.), VGS = 10V, ID = 32A DC/DC converters and Off-Line UPS Qg(tot) = 18.5n C (Typ.), VGS ...
Page 2 Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDD3682 FDD3682 TO-252AA 330mm 16mm 2500 units Electrical Characteristics TC = 25°C unless otherwis...
Page 3 Typical Characteristics TC = 25°C unless otherwise noted IS IP IO LT IP IE , P θJ , N IZ VGS = 10V TC, CASE TEMPERATURE (o C) TC, CASE TEMPERATURE (o C) Figure 1. Normalized Power Dissipation vs Figur...
Page 4 Typical Characteristics TC = 25°C unless otherwise noted IN IS TA , D IN , D IN 10µs If R = 0 t AV = (L)(IAS)/(1.3*RATED BVDSS - VDD) 100µs If R ≠ 0 t AV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] ...
Page 5 Typical Characteristics TC = 25°C unless otherwise noted , C PA IT IZ VGS = VDS, ID = 250µA ID = 250µA TJ, JUNCTION TEMPERATURE (o C) TJ, JUNCTION TEMPERATURE (o C) Figure 11. Normalized Gate Threshol...
Page 6 Test Circuits and Waveforms VDS BVDSS VARY t P TO OBTAIN REQUIRED PEAK IAS RG 0V IAS Figure 15. Unclamped Energy Test Circuit Figure 16. Unclamped Energy Waveforms VDD Qg(TOT) VGS = 10V DUT VGS = 2V I...
Page 7 Thermal Resistance vs. Mounting Pad Area The maximum rated junction temperature, TJM, and the thermal resistance of the heat dissipating path determines RθJA = 33.32+ 23.84/(0.268+Area) EQ.2 the maxim...
Page 8 PSPICE Electrical Model .SUBCKT FDD3682 2 1 3 ; rev Jun 2002 Ca 12 8 4e-10 Cb 15 14 6e-10 LDRAIN Cin 6 8 1.22e-9 DPLCAP DRAIN Dbody 7 5 Dbody MOD RLDRAIN Dbreak 5 11 Dbreak MOD RSLC1 DBREAK Dplcap 10 ...
Page 9 SABER Electrical Model REV Jun 2002 template FDD3682 n2,n1,n3 electrical n2,n1,n3 var i iscl dp..model dbodymod = (isl=2.4e-12,rs=4.4e-3,trs1=2.0e-3,trs2=4.5e-7,cjo=9e-10,m=0.58,tt=2.9e-8,xti=4.0) dp....
Page 10 SPICE Thermal Model th JUNCTION REV 20 Jun 2002 FDD3682_JC TH TL CTHERM1 TH 6 1.6e-3 CTHERM2 6 5 4.5e-3 CTHERM3 5 4 5.0e-3 RTHERM1 CTHERM1 CTHERM4 4 3 8.0e-3 CTHERM5 3 2 8.2e-3 CTHERM6 2 TL 4.7e-2 RTH...

Manual Details

Brand Fairchild
Pages 11
File Size 266.98 KB
Published July 06, 2026
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Frequently Asked Questions

What is the maximum continuous drain current?

The continuous drain current (I_D) is rated at 32A.

Can this MOSFET be used in automotive applications?

Yes, it is qualified to AEC Q101 and designed for extreme automotive test conditions.

What is the thermal resistance from junction to ambient (TO-252)?

The thermal resistance junction to ambient (θJA) for TO-252 package is 100 °C/W.

What are the typical use cases for this MOSFET?

It is designed for DC/DC converters, Off-Line UPS systems, and Distributed Power Architectures like VRMs.