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Fairchild FDC3612 Product Specifications Manual

Summary

This N-Channel Power Trench MOSFET (FDC3612) is engineered for high-efficiency power conversion, making it ideal for DC/DC converter design. Featuring exceptionally low gate charge and minimal on-resistance ($R_{DS(ON)}$), this component ensures superior performance in synchronous and conventional switching PWM controllers. The accompanying manual provides comprehensive technical specifications, including absolute maximum ratings, thermal characteristics, and detailed electrical curves necessary for reliable integration into high-power applications requiring fast switching speed and robust current handling ability.

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Page 1 Text Content

November 2011

FDC3612 100V N-Channel Power Trench MOSFET General Description Features This N-Channel MOSFET has been designed

• 2.6 A, 100 V RDS(ON) = 125 mΩ @ VGS = 10 V

specifically to improve the overall efficiency of DC/DC

RDS(ON) = 135 mΩ @ VGS = 6 V

converters using either synchronous or conventional switching PWM controllers. It has been optimized for

• High performance trench technology for extremely

low gate charge, low RDS(ON) and fast switching speed.

low RDS(ON)

Applications

• Low gate charge (14n C typ)

• DC/DC converter

• High power and current handling capability

• Fast switching speed

Super SOT -6TM

Absolute Maximum Ratings TA=25o C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ± 20 V ID Drain Current – Continuous (Note 1a) 2.6 A – Pulsed 20

Maximum Power Dissipation (Note 1a) 1.6 W PD (Note 1b) 0.8

TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C

Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 30 °C/W

Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .362 FDC3612 7’’ 8mm 3000 units

2011 Fairchild Semiconductor Corporation FDC3612 Rev B4

Page Summary Contents For Fairchild FDC3612 Product Specifications Manual

Page 1 November 2011 FDC3612 100V N-Channel Power Trench MOSFET General Description Features This N-Channel MOSFET has been designed • 2.6 A, 100 V RDS(ON) = 125 mΩ @ VGS = 10 V specifically to improve the ...
Page 2 Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy Single Pulse, ...
Page 3 Typical Characteristics , D IN EN (A , D IN EN (A S( LI ZE 1.8 IN -S -R ES IS TA VGS = 10V 1.6 VGS = 3.5V ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figur...
Page 4 Typical Characteristics , D IN EN (A S, TE -S VO LT (V r( t), LI ZE FF EC TI VE TR SI EN TH ER ES IS TA f = 1MHz ID = 2.6A VDS = 25V 50V VGS = 0 V 75V CISS Qg, GATE CHARGE (n C) VDS, DRAIN TO SOURCE V...
Page 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive lis...

Manual Details

Brand Fairchild
Pages 5
File Size 194.54 KB
Published June 01, 2026
34 views

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Frequently Asked Questions

What application is the FDC3612 MOSFET optimized for?

It is designed to improve efficiency in DC/DC converters using synchronous or conventional switching PWM controllers.

What is the typical On-Resistance (R_DS(ON)) at 10V and 2.6A?

The typical R_DS(ON) is 135 mΩ @ V = 10 V.

How should I ensure I am purchasing genuine components?

Purchase parts directly from Fairchild or from Authorized Fairchild Distributors to guarantee authenticity and full traceability.