Fairchild FDA59N30 Product Specifications Manual
Summary
Discover the $\text{FDA}59\text{N}30$, a high-performance N-Channel MOSFET engineered with proprietary DMOS technology for robust electrical efficiency. This device is ideal for demanding applications like high-efficiency Switched Mode Power Supplies ($\text{SMPS}$) and Active Power Factor Correction ($\text{APFC}$). Featuring low on-state resistance (down to $0.056 \Omega$) and fast switching capabilities at 300V/59A, it minimizes power loss. This comprehensive manual provides all necessary absolute maximum ratings, detailed electrical characteristics, thermal performance data, and operational guidelines required for reliable circuit design and integration.
Page 1 Text Content
FD 59N 30 300V N -C hannel M SFET
Uni FET
FDA59N30 300V N-Channel MOSFET
Features Description 59A, 300V, RDS(on) = 0.056Ω @VGS = 10 V These N-Channel enhancement mode power field effect transis-
Low gate charge ( typical 77 n C) tors are produced using Fairchilds proprietary, planar stripe, DMOS technology.
Low Crss ( typical 80 p F)
Fast switching This advanced technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor-
100% avalanche tested
mance, and withstand high energy pulse in the avalanche and
Improved dv/dt capability
commutation mode. These devices are well suited for high effi- cient switched mode power supplies and active power factor correction.
TO-3PN SD FDA Series
Absolute Maximum Ratings Symbol Parameter FDA59N30 Unit VDSS Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed (Note 1)
VGSS Gate-Source voltage ±30
EAS Single Pulsed Avalanche Energy (Note 2) m J
IAR Avalanche Current (Note 1)
EAR Repetitive Avalanche Energy (Note 1) m J
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C W/°C
TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C
TL Maximum Lead Temperature for Soldering Purpose,
1/8 from Case for 5 Seconds
Thermal Characteristics Symbol Parameter Min. Max. Unit RθJC Thermal Resistance, Junction-to-Case 0.25 °C/W
RθCS Thermal Resistance, Case-to-Sink 0.24 °C/W
RθJA Thermal Resistance, Junction-to-Ambient °C/W
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com FDA59N30 Rev. A
Page Summary Contents For Fairchild FDA59N30 Product Specifications Manual
Manual Details
| Brand | Fairchild |
|---|---|
| Pages | 8 |
| File Size | 427.76 KB |
| Published | June 22, 2026 |
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Frequently Asked Questions
What is the maximum continuous drain current rating for this component?
The device specifies a continuous drain current of 59 A at standard testing conditions.
For use above 25°C, how must I account for power dissipation?
You must derate the power dissipation at a rate of 4 W/°C when operating above 25°C.
What types of high-efficiency systems is this MOSFET optimized for?
It is well suited for both active power factor correction and switched mode power supplies.
Can this product be used in critical life support applications?
No, it is not authorized for use as a critical component in any life support devices or systems.