Fairchild FDA18N50 Product Specifications Manual

Summary

This power MOSFET is designed for high-efficiency switching applications, offering robust performance up to 500V and continuous drain currents of 19A. The accompanying datasheet provides comprehensive technical specifications, including detailed electrical characteristics, thermal ratings, and parameters crucial for design engineers. Ideal for electrical systems requiring fast response times, such as switched mode power supplies (SMPS) or active power factor correction (PFC) circuits.

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FD 18N 50 500V N -C hannel M SFET

October 2006

Uni FETTM

FDA18N50 500V N-Channel MOSFET Features Description 19A, 500V, RDS(on) = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary, planar

Low gate charge ( typical 45 n C)

stripe, DMOS technology.

Low Crss ( typical 25 p F)

Fast switching This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching

100% avalanche tested

performance, and withstand high energy pulse in the avalanche

Improved dv/dt capability

and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.

TO-3P SD FDA Series

Absolute Maximum Ratings Symbol Parameter FDA18N50 Unit VDSS Drain-Source Voltage

ID Drain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C) 11.4

IDM Drain Current - Pulsed (Note 1)

VGSS Gate-Source voltage ±30

EAS Single Pulsed Avalanche Energy (Note 2) m J

IAR Avalanche Current (Note 1)

EAR Repetitive Avalanche Energy (Note 1) m J

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (TC = 25°C)

- Derate above 25°C 1.92 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TL Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Thermal Characteristics Symbol Parameter Min. Max. Unit RθJC Thermal Resistance, Junction-to-Case 0.52 °C/W RθCS Thermal Resistance, Case-to-Sink Typ. 0.24 °C/W

RθJA Thermal Resistance, Junction-to-Ambient °C/W

Page Summary Contents For Fairchild FDA18N50 Product Specifications Manual

Page 1 FD 18N 50 500V N -C hannel M SFET October 2006 Uni FETTM FDA18N50 500V N-Channel MOSFET Features Description 19A, 500V, RDS(on) = 0.265Ω @VGS = 10 V These N-Channel enhancement mode power field effect...

Page 2 FD 18N 50 500V N -C hannel M SFET Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity FDA18N50 FDA18N50 TO-3PN Electrical Characteristics TC = 25°C unl...

Page 3 FD 18N 50 500V N -C hannel M SFET ap ac ita nc es [p F] ra in -S ou rc n- es is ta nc , D ra in ur re nt [A Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer C...

Page 4 FD 18N 50 500V N -C hannel M SFET , D ra in ur re nt [A BV , ( or al iz ed ra in -S ou rc Br ea kd ow Vo lta ge Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Fi...

Page 5 FD 18N 50 500V N -C hannel M SFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms www.fairchildsemi....

Page 6 FD 18N 50 500V N -C hannel M SFET Peak Diode Recovery dv/dt Test Circuit & Waveforms www.fairchildsemi.com FDA18N50 Rev. A

Page 7 FD 18N 50 500V N -C hannel M SFET Mechanical Dimensions www.fairchildsemi.com FDA18N50 Rev. A

Page 8 FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all suc...

Manual Details

Brand	Fairchild
Pages	8
File Size	732.40 KB
Published	July 07, 2026

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