Fairchild BSR58 N-Channel Low-Frequency Low-Noise Amplifier Data Sheet

BSR58

N-Channel Low-Frequency Low-Noise Amplifier This device is designed for low-power chopper or switching application sourced from process 51

SOT-23 Mark: M6

1. Drain 2. Source 3. Gate

Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VDGO Drain-Gate Voltage

VGSO Gate-Source Voltage - 40

IGF Forward Gate Current m A

Ptot Total Power Dissipation up to Tamb=40°C m W TSTG Storage Temperature Range - 55 ~ 150 °C TJ Junction Temperature °C

Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVGSS Gate-Source Voltage VDS = 0V, IC = 1µA

IGSS Gate Reverse Current VGS = 20V n A IDSS Zero-Gate Voltage Drain Current VDS = 15V, VGS = 0V m A VGS(off) Gate-Source Cut-off Voltage VDS = 15V, ID = 0.5n A 0.8 VDS(on) Drain-Source On Voltage VGS = 0V, ID = 5m A 0.4 rds(on) Drain-Source On Reverse VGS = 0V, ID = 0 Crss Reverse Transfer Capacitance VDS = 0V, VGS = 10V p F

td Delay Time VDD = 10V, VGS(on) = 0V n S

ID = 10m A, VGS(off) = 10V

tr Rise Time n S toff Turn-off Time n S

©2002 Fairchild Semiconductor Corporation Rev. A1, November 2002