Vishay TSUS4300 Specifications User Guide
Summary
This comprehensive technical guide features the TSUS4300 Infrared Emitting Diode, a high-radiant intensity component in standard GaAs technology with a peak wavelength of 950 nm. Ideal for sophisticated applications like infrared remote control systems and proximity sensors requiring high reliability. The manual provides detailed electrical, optical, and absolute maximum ratings, helping engineers select the perfect diode through comprehensive performance data at different ambient temperatures and currents.
Page 1 Text Content
TSUS4300 Vishay Semiconductors
Infrared Emitting Diode, 950 nm, Ga As
Description TSUS4300 is an infrared emitting diode in standard Ga As on Ga As technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics.
Features High radiant power and radiant intensity Low forward voltage Suitable for DC and high pulse current operation Standard T-1(∅ 3 mm) package
Angle of half intensity ϕ = ± 16° Applications Peak wavelength λp = 950 nm Infrared remote control systems with small package High reliability and low cost requirements in combination with silicon
Good spectral matching to Si photodetectors photo detectors. Infrared source in reflective sensors, tabe end detection. Excellent matching with pho-
Lead-free component
totransistor TEFT 4300.
Component in accordance to Ro HS 2002/95/EC and WEEE 2002/96/EC
Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Reverse Voltage VR Forward current IF m A Peak Forward Current tp/T = 0.5, tp = 100 µs IFM m A Surge Forward Current tp = 100 µs IFSM Power Dissipation PV m W Junction Temperature Tj °C Operating Temperature Range Tamb - 55 to + 100 °C Storage Temperature Range Tstg - 55 to + 100 °C Soldering Temperature t ≤ 5 sec, 2 mm from case Tsd °C Thermal Resistance Junction/ Rth JA K/W Ambient
Electrical Characteristics Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Min Typ. Max Unit
Forward Voltage IF = 100 m A, tp = 20 ms VF 1.3 1.7
IF = 1.5 A, tp = 100 µs VF 2.2
Temp. Coefficient of VF IF = 100 m A TKVF - 1.3 m V/K
Document Number 81053 www.vishay.com Rev. 1.4, 08-Mar-05
Page Summary Contents For Vishay TSUS4300 Specifications User Guide
Manual Details
| Brand | Vishay |
|---|---|
| Pages | 6 |
| File Size | 132.89 KB |
| Published | May 31, 2026 |
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Frequently Asked Questions
What is the peak wavelength of the TSUS4300 emitter?
The peak wavelength (λ) is 950 nm at a standard operating temperature.
Is this device suitable for medical or life-sustaining applications?
No, these products are not designed for use in medical, life-saving, or life-sustaining applications.
What types of electrical operation can the diode handle?
It is suitable for both DC and high pulse current operation.
Who must validate the operating parameters before use?
All operating parameters must be validated for each customer application by the customer.