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Vishay TN0201K TN0201KL Data Handbook

Summary

These N-Channel 20V Power MOSFETs are semiconductor switching solutions designed for reliable solid-state control in demanding applications, such as industrial automation, relay driving, and battery operation systems. This comprehensive manual provides circuit designers with critical electrical data, including absolute maximum ratings, on-resistance characteristics (Rds(on)), and detailed thermal performance curves. It is essential documentation for engineers building circuits that require precise power switching capabilities across various operating temperatures.

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Page 1 Text Content

TN0201K/TN0201KL Vishay Siliconix New Product

N-Channel 20−V (D−S) MOSFET

FEATURES

PRODUCT SUMMARY

Trench FET Power MOSFET

ID (A)

V(BR)DSS r DS( on APPLICATIONS

Min (V) Max () VGS(th) (V) TN0201K TN0201KL

Direct Logic-Level Interface: TTL/CMOS

1.0 @ VGS = 10 V 0.42 0.64 Drivers: Relays, Solenoids, Lamps, Hammers,

0 to 3

Displays, Memories, Transistors, etc.

1.4 @ VGS = 4.5 V 0.35 0.53

Battery Operated Systems Solid-State Relays

TO-236 TO-226AA (SOT-23) (TO-92)

Device Marking Front View

“S” TN 0201KL xxyy

“S” = Siliconix Logo xxyy = Date Code

Top View TN0201K

Top View

Marking Code: K3ywl

TN0201KL

K3 = Part Number Code for TN0201K y = Year Code w = Week Code l = Lot Traceability Ordering Information: TN0201K-T1—E3 (Lead Free) Ordering Information: TN0201KL-TR1

ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED)

Limit

Parameter Symbol TN0201K TN0201KL Unit

Drain-Source Voltage VDS Gate-Source Voltage VGS

TA= 25C 0.42 0.64

Continuous Drain Current (TJ = 150C) ID

TA= 70C 0.33 0.51

Pulsed Drain Currenta IDM 0.8 1.5

TA= 25C 0.35 0.8

Power Dissipation PD

TA= 70C 0.22 0.51

Thermal Resistance, Junction-to-Ambient Rth JA C/W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150

Notes a. Pulse width limited by maximum junction temperature.

Document Number: 72671 www.vishay.com S-40245—Rev. A, 16-Feb-04

Page Summary Contents For Vishay TN0201K TN0201KL Data Handbook

Page 1 TN0201K/TN0201KL Vishay Siliconix New Product N-Channel 20−V (D−S) MOSFET FEATURES PRODUCT SUMMARY Trench FET Power MOSFET ID (A) V(BR)DSS r DS( on APPLICATIONS Min (V) Max () VGS(th) (V) TN0201K TN...
Page 2 TN0201K/TN0201KL Vishay Siliconix ra in ur re nt New Product SPECIFICATIONS (TA = 25C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Vo...
Page 3 TN0201K/TN0201KL ou rc ur re nt at e- to -S ou rc ol ta ge n- es is ta nc Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25C UNLESS NOTED) On-Resistance vs. Drain Current Capacitance VGS = 4.5...
Page 4 TN0201K/TN0201KL or al iz ed ffe ct iv Tr an si en ra in ur re nt Vishay Siliconix he rm al Im pe da nc New Product TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Threshold Voltage ID = 250 A ar ia nc (...
Page 5 TN0201K/TN0201KL or al iz ed ffe ct iv Tr an si en Vishay Siliconix New Product he rm al Im pe da nc TYPICAL CHARACTERISTICS (25C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Amb...

Manual Details

Brand Vishay
Pages 5
File Size 76.87 KB
Published June 06, 2026
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Frequently Asked Questions

What is the maximum operating junction temperature range for this MOSFET?

The operating junction and storage temperature range ($T_J$) is from -55 to 150°C.

What is the typical on-state resistance (Rds(on)) for the TN0201KL model at room temperature?

The typical Drain-Source On-Resistance ($r_{DS(on)}$) for TN0201KL is 1.0 Ohm at 25°C.

What is the absolute maximum drain-source voltage ($V_{DS}$) rating?

The absolute maximum limit set for the Drain-Source Voltage (VDS) is 20 V.

How are the parts structured for ordering and identification?

The datasheet uses specific part number codes (e.g., TN0201K/TN0201KL), where 'K' or 'L' marks differentiate the models.