Vishay Si6447DQ Data Sheet
Summary
This comprehensive datasheet for the Si6447DQ MOSFET provides power electronics designers with all necessary technical specifications and performance data. It details critical operating parameters, including dynamic characteristics, on-resistance, thermal limits, and switching behavior across various temperatures and currents. This manual is essential for electrical engineers and product developers designing reliable, high-efficiency circuit solutions that require robust switching capabilities.
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Si6447DQ Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
VDS (V) r DS(on) () ID (A)
0.09 @ VGS = –10 V 3.2
0.16 @ VGS = –4.5 V 2.4
TSSOP-8
Source Pins 2, 3, 6 and 7 must be tied common.
Si6447DQ
Top View
P-Channel MOSFET
Parameter Symbol Limit Unit
Drain-Source Voltage VDS –20
Gate-Source Voltage VGS
TA = 25C 3.2
Continuous Drain Current (TJ = 150C)a ID
TA = 70C 2.5
Pulsed Drain Current IDM
Continuous Source Current (Diode Conduction)a IS –1.7
TA = 25C 1.5
Maximum Power Dissipationa PD
TA = 70C 1.0
Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150
Parameter Symbol Limit Unit
Maximum Junction-to-Ambienta Rth JA C/W
Notes a. Surface Mounted on FR4 Board, t 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70170 www.vishay.com Fax Back 408-970-5600 S-00872—Rev. G, 01-May-00 2-1
Page Summary Contents For Vishay Si6447DQ Data Sheet
Manual Details
| Brand | Vishay |
|---|---|
| Pages | 4 |
| File Size | 43.13 KB |
| Published | June 05, 2026 |
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