Vishay Si4834DY Data Sheet
Summary
The Si4834DY features a high-performance N-Channel MOSFET combined with an integrated Schottky diode, making it ideal for robust power switching and signal conditioning in demanding electronics applications. This comprehensive manual provides detailed specifications, including absolute maximum ratings, electrical characteristics (such as on-resistance and gate charge), thermal impedance curves, and operational data required for reliable design integration. It is essential reading for hardware engineers designing efficient, durable circuits utilizing MOSFET technology.
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Si4834DY Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY VDS (V) r DS(on) () ID (A)
0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5
SCHOTTKY PRODUCT SUMMARY
VSD (v)
VDS (V) Diode Forward Voltage IF (A)
G1 D1 Schottky Diode
Top View
Ordering Information: Si4834DY S2
Si4834DY-T1 (with Tape and Reel)
N-Channel MOSFET
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED)
Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS Gate-Source Voltage VGS
TA = 25C 7.5 5.7
Continuous Drain Current (TJ = 150C)a ID
TA = 70C 6.0 4.6
Pulsed Drain Current IDM Continuous Source Current (Diode Conduction)a IS 1.7 0.9
TA = 25C 2.0 1.1
Maximum Power Dissipationa PD
TA = 70C 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150
THERMAL RESISTANCE RATINGS
MOSFET Schottky Typ Max Typ Max
Parameter Symbol Unit
t 10 sec 62.5 62.5
ax mum unc ti on- o- bi en ta th JA
Steady-State C/W
Maximum Junction-to-Foot (Drain) Steady-State Rth JC
Notes a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71183 www.vishay.com S-31062—Rev. B, 26-May-03
Page Summary Contents For Vishay Si4834DY Data Sheet
Manual Details
| Brand | Vishay |
|---|---|
| Pages | 5 |
| File Size | 42.14 KB |
| Published | June 15, 2026 |
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