Vishay PD - 9.543C IRFPG50 HEXFET Power MOSFET User Manual and Specifications
Summary
The IRFPG50 is an N-Channel HEXFET Power MOSFET ideal for demanding power management applications. This comprehensive datasheet provides electrical engineers and design professionals with detailed technical specifications, including maximum safe operating areas, crucial switching characteristics (dv/dt, recovery analysis), and optimal gate drive guidelines. It covers application considerations, required ground plane implementation, and physical dimensions in the TO-247AC package, ensuring reliable circuit integration for high-performance power systems.
Page 1 Text Content
PD - 9.543C
IRFPG50 HEXFET® Power MOSFET
www.irf.com
Page Summary Contents For Vishay PD - 9.543C IRFPG50 HEXFET Power MOSFET User Manual and Specifications
Manual Details
| Brand | Vishay |
|---|---|
| Pages | 8 |
| File Size | 211.37 KB |
| Published | May 28, 2026 |
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Frequently Asked Questions
How is the MOSFET operated in relation to Rds(on)?
Operation in this area is limited by Rds(on).
What circuit considerations are required for dv/dt testing?
Consider low stray inductance, a ground plane, and low leakage inductance. A driver of the same type as the D.U.T. is recommended.
What package types are available for this MOSFET?
The manual lists TO-247AC, TO-247, and details dimensions.**
What are the primary signal connections for the physical packaging?
Connections include GATE (3X), DRAIN (2X), и SOURCE (3).