# A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Vishay 6N1135 6N1136 Data Sheet

Summary

This comprehensive guide provides detailed specifications for 6N1135 and (or) 6N1136 high-speed optocouplers from Vishay Semiconductors. Designed for industrial electronics, these components offer safe signal transmission between isolated circuits up to 2.0 MHz. The manual details absolute maximum ratings, input/output parameters, switching characteristics, and technical options, making it essential reading for electrical engineers and hardware designers who require reliable, isolated coupling solutions for their complex circuit designs.

📄 Preview PAGE OF 10

Page 1 Text Content

6N1135/ 6N1136 Vishay Semiconductors

High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated

Features Operating Temperature from -55 °C to +110 °C Isolation Test Voltage: 5300 VRMS TTL Compatible High Bit Rates: 1.0 MBd

(VCC)NC

Bandwidth 2.0 MHz

Open-Collector Output

External Base Wiring Possible

NC (GND)

Lead-free component

Component in accordance to Ro HS 2002/95/EC Pb

and WEEE 2002/96/EC Pb-free

Agency Approvals Signals can be transmitted between two electrically separated circuits up to frequencies of 2.0 MHz. The

UL 1577 - File No. E52744 System Code H or J

potential difference between the circuits to be coupled

DIN EN 60747-5-2 (VDE0884)

should not exceed the maximum permissible refer-

CUL - File No. E52744, equivalent to CSA bulletin

ence voltages

Order Information

Description

Part Remarks

The 6N1135 and 6N1136 are 110 °C rated optocou-

plers with a Ga AIAs infrared emitting diode, optically 6N1135 CTR ≥ 7 %, DIP-8

coupled with an integrated photo detector which con- 6N1136 CTR ≥ 19 %, DIP-8 sists of a photo diode and a high-speed transistor in a

6N1135-X007 CTR ≥ 7 %, SMD-8 (option 7)

DIP-8 plastic package.

6N1136-X006 CTR ≥ 19 %, DIP-8 400 mil (option 6) 6N1136-X007 CTR ≥ 19 %, SMD-8 (option 7)

6N1136-X009 CTR ≥ 19 %, SMD-8 (option 9)

For additional information on the available options refer to Option Information.

Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.

Input Parameter Test condition Symbol Value Unit

Reverse voltages VR 5.0

Forward current IF m A Peak forward current t = 1.0 ms, duty cycle 50 % IFM m A Maximum surge forward current t ≤ 1.0 µs, 300 pulses/s IFSM 1.0 Thermal resistance Rth K/W Power dissipation Tamb = 70 °C Pdiss m W

Document Number 83909 www.vishay.com Rev. 1.5, 26-Oct-04

Page Summary Contents For Vishay 6N1135 6N1136 Data Sheet

Page 1 6N1135/ 6N1136 Vishay Semiconductors High Speed Optocoupler, 1 MBd, Photodiode with Transistor Output, 110 °C Rated Features Operating Temperature from -55 °C to +110 °C Isolation Test Voltage: 5300 V...
Page 2 6N1135/ 6N1136 Vishay Semiconductors Output Parameter Test condition Symbol Value Unit Supply voltage VCC - 0.5 to 15 Output voltage VO - 0.5 to 15 Emitter-base voltage VEBO 5.0 Output current IO 8.0 ...
Page 3 6N1135/ 6N1136 Vishay Semiconductors Coupler Parameter Test condition Part Symbol Min Typ. Max Unit Capacitance (input-output) f = 1.0 MHz CIO 0.6 p F Current Transfer Ratio IF = 16 m A, VO = 0.4 6N11...
Page 4 6N1135/ 6N1136 Vishay Semiconductors tr tf A: IF=0 m A Pulse generator VO ZO=50 tr,tf=8 ns B: IF=16 m A Figure 2. Common-Mode Interference Immunity Safety and Insulation Ratings As per IEC60747-5-2, §...
Page 5 6N1135/ 6N1136 Vishay Semiconductors ol le ct or ur re nt ol le ct or ur re nt or ar ol ta ge Typical Characteristics (Tamb = 25 °C unless otherwise specified) VCC = VCE = 15 V VCC = VCE = 5 V IF – Fo...
Page 6 or al iz ed or al iz ed ol le ct or ur re nt or or Vishay Semiconductors IF = 20 m A VCC= 5 V, VO = 0.4 V, saturated 2 m A 0.7 Normalized to IB = 20 µA, Tamb = 25C, 0.6 VO = 5 V, non saturated Tamb –...
Page 7 6N1135/ 6N1136 Vishay Semiconductors itc hi ng im ns itc hi ng im ns or . P ho to ur re nt VCC= 5 V, IF = 16 m A –55°C RL = 1.9 kΩ, Tamb = 25 °C t PLH ( 3V ) t PLH ( 1.5V ) t PHL ( 1.5V ) 0.001 110°C ...
Page 8 /∆ ll ig l C rr ra sf tio Vishay Semiconductors Figure 21. Small Signal Current Transfer Ratio vs. Quiescent Input Current (VCC 5.0 V, RL Ω) IF m A Package Dimensions in Inches (mm) pin one ID ISO Met...
Page 9 6N1135/ 6N1136 Vishay Semiconductors Option Option Option .407 (10.36) .300 (7.62) .375 (9.53) .391 (9.96) TYP. .395 (10.03) .028 (0.7) MIN. .180 (4.6) .0098 (.249) .012 (.30) typ. .315 (8.0) MIN. 15°...
Page 10 6N1135/ 6N1136 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor Gmb H to 1. Meet all present and future national and international statutory r...