Vishay 1N5221B to 1N5267B Data Sheet
Summary
Enhance your circuits with our high-stability Silicon Z-Diodes (1N5221B range). These precision components provide reliable voltage regulation critical for sensitive electronic applications. The manual details comprehensive electrical characteristics, absolute maximum ratings, and dimensional data in a single resource. Essential reading for engineers and designers requiring robust semiconductor solutions for stable power conditioning.
Page 1 Text Content
1N5221B...1N5267B Vishay Telefunken
Silicon Z–Diodes
Features Very sharp reverse characteristic Very high stability Low reverse current level VZ–tolerance ± 5%
Applications
Voltage stabilization
Absolute Maximum Ratings Tj = 25C
Parameter Test Conditions Type Symbol Value Unit
Power dissipation TL75C PV m W Z–current IZ PV/VZ m A Junction temperature Tj Storage temperature range Tstg –65...+200
Maximum Thermal Resistance Tj = 25C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=9.5mm (3/8”), TL=constant Rth JA K/W
Electrical Characteristics Tj = 25C Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=200m A VF 1.1
www.vishay.de • Fax Back +1-408-970-5600Document Number 85588
Rev. 2, 06-Aug-99 1 (4)
Page Summary Contents For Vishay 1N5221B to 1N5267B Data Sheet
Manual Details
| Brand | Vishay |
|---|---|
| Pages | 4 |
| File Size | 47.54 KB |
| Published | June 02, 2026 |
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Frequently Asked Questions
What is the maximum allowable junction temperature?
The maximum junction temperature for these diodes is 200°C.
Are there stability measurements provided?
Yes, a voltage tolerance (V_Z/T) is listed in percent per degree Kelvin (°/K).
Do I need to validate the operating parameters myself?
All operating parameters must be validated for each customer application by the customer.
What does the thermal resistance represent?
The standard thermal resistance (R_thJA) at 25°C is measured based on a lead length of 9.5mm and a heat sink thermal resistance of 30K/W.