Toshiba TPC8206 Data Handbook
Summary
The TPC8206 is a high-performance N-Channel MOSFET, featuring a small footprint and low ON resistance ideal for demanding power applications. This technical manual provides comprehensive data on its electrical characteristics, thermal performance, and maximum ratings. It serves designers and engineers building portable equipment, notebook PCs, battery management systems, and general personal electronics that require reliable, efficient solid-state switching solutions.
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TPC8206
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
TPC8206
Lithium Ion Battery Applications
Unit: mm
Notebook PC Applications Portable Equipment Applications
Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement-mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 m A)
Maximum Ratings (Ta 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 60 V Drain-gate voltage (RGS 20 k) VDGR 60 V Gate-source voltage VGSS 20 V
DC (Note 1) ID 5
Drain current
Pulse (Note 1) IDP 20 JEDEC ―
Single-device JEITA ― operation (Note 3a) PD (1) 1.5 Drain power
dissipation
TOSHIBA 2-6J1E
Single-device value at dual operation PD (2) 1.0 Weight: 0.080 g (typ.)
(Note 2a)
(Note 3b) Single-device operation (Note 3a) PD (1) 0.75 Drain power
dissipation
Circuit Configuration
Single-device value at dual operation PD (2) 0.45
(Note 2b)
(Note 3b) 8 7 6 5
Single pulse avalanche energy (Note 4) EAS 92 m J Avalanche current IAR 5 A Repetitive avalanche energy Single-device value at dual operation
EAR 0.1 m J
(Note 2a, 3b, 5) Channel temperature Tch 150 °C
Storage temperature range Tstg 55 to 150 °C
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Page Summary Contents For Toshiba TPC8206 Data Handbook
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 7 |
| File Size | 218.32 KB |
| Published | July 16, 2026 |
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Frequently Asked Questions
What is the typical drain-source ON resistance (R_DS(ON))?
The typical value is 40 mΩ.
Can I use this transistor above a certain temperature limit?
No, devices must be used only when the channel temperature remains below 150°C.
What special care must be taken when handling the TPC8206?
It is an electrostatic sensitive device and requires careful handling.
What are the maximum ratings for drain power dissipation during single-device operation?
The maximum rating is 1.5 W (at t=10s).