Toshiba TPC8102 Data Handbook
Summary
The TPC8102 is a high-performance Silicon P-Channel MOSFET designed for demanding mobile and portable electronic applications, including notebook PCs and Li-ion battery management systems. This technical datasheet provides full coverage of its electrical characteristics, thermal performance specifications, and operational ratings. It is essential reading for system engineers and designers needing to safely integrate this low-leakage, high-admittance transistor into rigorous, compact electronic designs.
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TPC8102
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π−MOSVI)
TPC8102
Lithium Ion Battery Applications
Unit: mm
Notebook PCs Portable Equipment Applications
Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 34 mΩ (typ.) High forward transfer admittance : |Yfs| = 9 S (typ.) Low leakage current : IDSS = −10 µA (max) (VDS = −30 V) Enhancement−mode : Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1 m A)
Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS −30 V Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V Gate-source voltage VGSS ±20 V
DC (Note 1) ID −6
Drain current JEDEC ―
Pulse (Note 1) IDP −24
JEITA ―
Drain power dissipation (t = 10 s) (Note 2a) PD 2.4 W
TOSHIBA 2-6J1B
Drain power dissipation (t = 10 s)
(Note 2b) PD 1.0 W Weight: 0.080 g (typ.)
Single pulse avalanche energy (Note 3) EAS 47 m J Avalanche current IAR −6 A Circuit Configuration Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.24 m J Channel temperature Tch 150 °C
Storage temperature range Tstg −55 to 150 °C
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
Page Summary Contents For Toshiba TPC8102 Data Handbook
Manual Details
| Brand | Toshiba |
|---|---|
| Pages | 7 |
| File Size | 462.13 KB |
| Published | July 16, 2026 |
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Frequently Asked Questions
How low is the typical Drain—source ON resistance?
The nominal R_DS(ON) typical value is 34 mΩ.
What temperature limits must I observe when operating this device?
The channel temperature (T_ch) cannot exceed 150°C.
Does handling the TPC8102 require special care?
Yes, it is an electrostatic sensitive device and must be handled with caution.
What types of applications are prohibited for this product?
It is not warranted for 'Unintended Usage,' such as medical or aircraft instruments.