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Toshiba TPC8003 Data Handbook

Summary

A high-performance N-Channel Field Effect Transistor engineered for demanding portable applications, including Notebook PCs and Lithium Ion Battery systems. This detailed technical manual provides comprehensive specifications, covering electrical ratings, thermal characteristics, and handling guidelines essential for system designers. It specifies the device's low drain-source ON resistance and compact footprint, making it ideal for integrating into general consumer electronics requiring efficiency and reliability.

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查询TPC8003供应商

TPC8003

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)

TPC8003

Lithium Ion Battery Applications

Unit: mm

Portable Equipment Applications Notebook PC Applications

Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 5.4 mΩ (typ.) High forward transfer admittance : |Yfs| = 21 S (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode : Vth = 0.8~2.5 V (VDS = 10 V, ID = 1 m A)

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Drain-source voltage VDSS 30 V

Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V

Gate-source voltage VGSS ±20 V

DC (Note 1) ID 13

JEDEC ―

Drain current

Pulse (Note 1) IDP 52

JEITA ―

Drain power dissipation (t = 10 s) (Note 2a) PD 2.4 W TOSHIBA 2-6J1B Drain power dissipation (t = 10 s)

Weight: 0.080 g (typ.)

(Note 2b) PD 1.0 W

Single pulse avalanche energy (Note 3) EAS 220 m J

Avalanche current IAR 13 A Circuit Configuration

Repetitive avalanche energy (Note 2a) (Note 4) EAR 0.24 m J

Channel temperature Tch 150 °C

Storage temperature range Tstg −55 to 150 °C

Note 1, Note 2, Note 3 and Note 4: See the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

Page Summary Contents For Toshiba TPC8003 Data Handbook

Page 1 查询TPC8003供应商 TPC8003 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII) TPC8003 Lithium Ion Battery Applications Unit: mm Portable Equipment Applications Notebook PC Applications Sma...
Page 2 TPC8003 Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Rth (ch-a) 52.1 Thermal resistance, channel to ambient (t = 10 s) (Note 2b) ...
Page 3 TPC8003 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 µA Drain cut−off current IDSS VDS = 30 V...
Page 4 TPC8003
Page 5 TPC8003
Page 6 TPC8003
Page 7 TPC8003 030619EAARESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the application...

Manual Details

Brand Toshiba
Pages 7
File Size 492.22 KB
Published June 04, 2026
24 views

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Frequently Asked Questions

Does this device require special handling?

Yes, it is an electrostatic-sensitive device and must be handled with caution.

What are the temperature limits for operation?

The channel temperature must not exceed 150°C during use.

In what types of equipment is this transistor intended for use?

It is designed for general electronics applications, such as computers, office equipment, and industrial robotics.

Are there any disallowed uses for the TPC8003?

No, it is not warranted for 'Unintended Usage,' which includes medical or aerospace instruments.