ROHM VT6M1 User Guide and Manual

Summary

The VT6M1 is a complementary pair of 1.2V-drive N-channel and P-channel MOSFETs in a compact VMT6 package. Features include low on-resistance, small footprint, and low voltage drive capability. The N-channel device handles 20V drain-source voltage with ±100mA continuous current, while the P-channel supports -20V. Both devices feature ±8V to ±10V gate-source ratings and 150°C channel temperature. Applications include switching circuits where space and low-voltage control are critical. Target users are electronics engineers and PCB designers developing compact battery-powered devices, portable electronics, and low-voltage switching applications.

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ROHM VT6M1 User Guide and Manual - Page 1

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Page 1 Text Content

Data Sheet

1.2V Drive Nch + Pch MOSFET VT6M1 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ VMT6 Silicon P-channel MOSFET

Features 1) Low on-resistance.

2) Small package(VMT6). (1) (2) (3)

3) Low voltage drive(1.2V drive). 0.4 0.4 0.8±0.1

Abbreviated symbol : M01

Application Switching

Packaging specifications Inner circuit

Package Taping (6) (5) (4)

Type Code T2CR

Basic ordering unit (pieces)

VT6M1

(1) Tr1 Source ∗1

(2) Tr1 Gate (3) Tr2 Drain

(4) Tr2 Source (5) Tr2 Gate 1 ESD PROTECTION DIODE (6) Tr1 Drain

2 BODY DIODE

Absolute maximum ratings (Ta = 25C)

Limits

Parameter Symbol Unit

Tr1 : N-ch Tr2 : P-ch

Drain-source voltage VDSS 20 Gate-source voltage VGSS 8 10

Continuous ID 100 100 m A

Drain current

Pulsed IDP *1 400 400 m A *2 0.15 W / TOTAL Power dissipation PD

0.12 W / ELEMENT

Channel temperature Tch C

Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1%

*2 Each terminal mounted on a recommended land.

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Page Summary Contents For ROHM VT6M1 User Guide and Manual

Page 1 Data Sheet 1.2V Drive Nch + Pch MOSFET VT6M1 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ VMT6 Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Small package(VMT6). (1) (2) ...

Page 2 Data Sheet VT6M1 Electrical characteristics (Ta = 25C) <Tr1(Nch)> Symbol Min. Typ. Max. Unit Conditions Parameter Gate-source leakage IGSS 10 A VGS=±8V, VDS=0V Drain-source breakdown voltage...

Page 3 Data Sheet VT6M1 Electrical characteristics (Ta = 25C) <Tr2(Pch)> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=10V, VDS=0V Drain-source breakdown voltag...

Page 4 Data Sheet VT6M1 IC IN -S -S IC IN -S -S IS )[m IS )[m IN [A Electrical characteristic curves 〈Tr.1(Nch)〉 VGS= 4.5V Ta=25°C VDS= 10V VGS= 4.5V VGS= 4.0V Pulsed VGS= 4.0V Pulsed 0.08 0.08 VGS= 2.5V VG...

Page 5 Data Sheet VT6M1 IT IN IM IT fs [S VDS= 10V VGS=0V Ta=25℃ Pulsed Pulsed Pulsed ID= 0.01A ID= 0.1A 0.1 Ta= -25°C 0.1 Ta=25°C Ta=75°C Ta= 125°C Ta=125°C Ta= 75°C Ta= 25°C Ta= - 25°C IT DRAIN-CURRENT : I...

Page 6 Data Sheet VT6M1 IC IN -S -S IC IN -S -S IS IS IN [A 〈Tr.2(Pch)〉 Ta=25°C VDS= -10V Pulsed Pulsed VGS= -1.5V 0.1 Ta= 125°C VGS= -4.5V Ta= 75°C VGS= -4.5V VGS= -4.0V Ta= 25°C VGS= -4.0V VGS= -2.5V 0.01 ...

Page 7 Data Sheet VT6M1 IT IN IM IT fs [S VDS= -10V VGS=0V Ta=25°C Pulsed Pulsed Pulsed ID= -0.001A 0.1 0.1 Ta= 125°C ID= -0.1A Ta= 125°C Ta= 75°C Ta= 75°C Ta= 25°C Ta= 25°C Ta= -25°C Ta= -25°C IT IN [A DRAI...

Page 8 Data Sheet VT6M1 Measurement circuits <Tr1(Nch)> Pulse width VGS ID VDS 90% 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switchi...

Page 9 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	9
File Size	1.29 MB
Published	June 16, 2026

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Frequently Asked Questions

What are the key features of the VT6M1 MOSFET?

Low on-resistance, small VMT6 package, and low voltage drive (1.2V).

What is the absolute maximum drain-source voltage for the N-channel part?

The drain-source voltage (VDSS) absolute maximum rating is 20V for the N-channel (Tr1).

What is the typical static on-state resistance for the P-channel at Vgs=-1.5V?

The typical RDS(on) for the P-channel (Tr2) is 13.2 Ω max at I_D = -10mA and V_GS = -1.5V.

What ESD protection is recommended for this MOSFET?

The datasheet advises designing an ESD protection circuit as the product may be vulnerable in large electrified environments.