ROHM US6K2 Data Sheet

Summary

This N-channel MOSFET is a high-speed power transistor engineered for efficient switching applications, delivering low on-resistance and reliable 4V drive performance. The accompanying manual provides exhaustive technical specifications for electronics designers and engineers, including absolute maximum ratings, comprehensive electrical characteristics, thermal resistance data, and detailed dynamic and switching time curves. Use this resource to integrate optimized switching solutions into your circuit designs with confidence.

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US6K2

Transistors

4V Drive Nch+Nch MOSFET US6K2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET

TUMT6

Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-resistance. 3) 4V drive.

Abbreviated symbol : K02

Applications Switching

Packaging specifications Inner circuit

Package Taping

Type Code TR

Basic ordering unit (pieces)

US6K2 ∗2

(1) Tr1 Source 0. 2M ax (2) Tr1 Gate (3) Tr2 Drain

(1) (2) (3) (4) Tr2 Source

∗1 ESD PROTECTION DIODE (5) Tr2 Gate ∗2 BODY DIODE (6) Tr1 Drain

Absolute maximum ratings (Ta=25°C) <It is the same ratings for the Tr1 and Tr2>

Parameter Symbol Limits Unit

Drain-source voltage VVDSS Gate-source voltage VVGSS Continuous ±1.4 AID

Drain current

Pulsed ±5.6 AIDP Source current Continuous 0.6 AIS

(Body diode) ∗1

Pulsed 5.6 AISP ∗2 1.0 W / TOTAL

Total power dissipation PD

W / ELEMENT0.7 Channel temperature °CTch

Range of storage temperature −55 to +150 °CTstg

∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board

Thermal resistance

Parameter Symbol Limits Unit

°C/W / TOTAL

Channel to ambient Rth(ch-a)

°C/W / ELEMENT179

∗ Mounted on a ceramic board

Rev.B 1/3

Page Summary Contents For ROHM US6K2 Data Sheet

Page 1 US6K2 Transistors 4V Drive Nch+Nch MOSFET US6K2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT6 Features 1) Two Nch MOSFETs are put in TUMT6 package. 2) High-speed switching, Low On-re...

Page 2 US6K2 Transistors Electrical characteristics (Ta=25°C) <It is the same characteristics for the Tr1 and Tr2> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS µA VGS=20V, V...

Page 3 IC IN -S IN US6K2 ID IT p F -S IS on ) ( Transistors Electrical characteristics curves Ta=25°C Ta=25°C Ta=25°C f=1MHz VDD=15V VDD=15V VGS=0V VGS=10V ID=1.4A RG=10Ω RG=10Ω Pulsed Pulsed td(off) td(on) ...

Page 4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand	ROHM
Pages	4
File Size	68.71 KB
Published	June 17, 2026

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Frequently Asked Questions

What is the package type of the US6K2?

It uses a TUMT6 package containing two N-channel MOSFETs.

What is the max drain-source voltage?

The absolute maximum drain-source voltage is 30V at 25°C.

Is the US6K2 suitable for 4V gate drive?

Yes, it is a 4V drive MOSFET with low on-resistance and high-speed switching.

What is the max total power dissipation?

The max total power dissipation is 1.0W when mounted on a ceramic board.