ROHM US5U38 User Guide and Manual

Summary

The ROHM US5U38 is a compact transistor combining a P-channel MOSFET with a Schottky barrier diode in a TUMT5 package, designed for switching applications. The datasheet details its low on-resistance, fast switching characteristics, 2.5V low voltage drive capability, and built-in diode with low forward voltage. It includes absolute maximum ratings, electrical characteristics, and application circuit recommendations. Target users are power electronics engineers and circuit designers developing efficient switching power supplies, DC-DC converters, and load switching circuits in portable and consumer electronics.

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Page 1 Text Content

US5U38

Transistor

2.5V Drive Pch+SBD MOSFET US5U38

Structure Dimensions (Unit : mm)

Silicon P-channel MOSFET

TUMT5

Schottky Barrier DIODE

Features 1) The US5U38 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switching. 3) Low voltage drive (2.5V).

4) Built-in schottky barrier diode has low forward voltage. Abbreviated symbol : U38

Equivalent circuit

Applications

Switching (5) (4)

Packaging specifications

Package Taping Type Code TR

∗1 (1)Gate

Basic ordering unit (pieces)

(2)Source 0. 2M ax (1) (2) (3) (3)Anode

US5U38

∗1 ESD protection diode (4)Cathode ∗2 Body diode (5)Drain

Absolute maximum ratings (Ta=25°C) <MOSFET>

Parameter Symbol Limits Unit

Drain-source voltage −20 VVDSS Gate-source voltage ±12 VVGSS Continuous ±1.0 AID

Drain current

Pulsed ±4.0 AIDP Source current Continuous −0.4 AIS

(Body diode) ∗1

Pulsed −4.0 AISP

Channel temperature °CTch

∗3 0.7Power dissipation W / ELEMENTPD

Repetitive peak reverse voltage VRM V25 Reverse voltage VR V20 Forward current IF A0.7 IFSM ∗2

Forward current surge peak A3.0 Junction temperature Tj °C150

0.5Power dissipation ∗3 W / ELEMENTPD

Power dissipation 1.0 W / TOTALPD Range of storage temperature −55 to +150 °CTstg ∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz•1cyc. ∗3 Mounted on a ceramic board

Page Summary Contents For ROHM US5U38 User Guide and Manual

Page 1 US5U38 Transistor 2.5V Drive Pch+SBD MOSFET US5U38 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT5 Schottky Barrier DIODE Features 1) The US5U38 combines Pch MOSFET with a Schottky bar...

Page 2 US5U38 Transistor Electrical characteristics (Ta=25°C) <MOSFET> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS=±12V, VDS=0V Drain-source breakdown voltage V(...

Page 3 IN −I [A TA TI IN −S −S US5U38 TA TE IS TA IN −I Transistor Electrical characteristic curves VDS=−10V VGS=−4.5V VGS=−4V Pulsed Pulsed Pulsed Ta=125°C 75°C 25°C −25°C 0.1 Ta=125°C Ta=125°C 75°C 75°C 25...

Page 4 US5U38 -S LT : - [V Transistor Pulsed Ta = 125℃ pulsed Ta = 75℃ Ta = 25℃ Ta = 125℃ Ta = 75℃ Ta = 25℃ Ta= - 25℃ 0.01 Ta= - 25℃ Ta=25 C VDD=−15V ID=−1A 0.1 : I [u RG=10Ω Pulsed TOTAL GATE CHARGE : Qg[n ...

Page 5 US5U38 Transistor Measurement circuits Pulse Width VDS 90% 90% D.U.T. RL td(on) td(off)tr tf ton toff Fig.13 Switching Time Measurement Circuit Fig.14 Switching Waveforms VGS ID VDS Qgs Qgd IG(Const) ...

Page 6 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand	ROHM
Pages	6
File Size	134.54 KB
Published	June 16, 2026

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Frequently Asked Questions

What are the key features of the US5U38?

The US5U38 combines a P-channel MOSFET with a Schottky barrier diode in one package, offering low on-resistance, fast switching, and low voltage drive (2.5V).

What is the absolute maximum drain current for the US5U38?

The absolute maximum continuous drain current is ±1.0 A, and the pulsed drain current is ±4.0 A.

What is the typical on-resistance at a -2.5V gate drive?

At a gate-source voltage of -2.5V and a drain current of -0.5A, the typical static drain-source on-state resistance (RDS(on)) is 570 mΩ.

Is this product suitable for medical or aerospace applications?

No. The document states these products are not designed for use in equipment requiring extremely high reliability where malfunction could endanger life, such as medical or aerospace devices.