ROHM UMH8N IMH8A Data Sheet
Summary
This manual provides comprehensive technical specifications for dual digital transistors (UMH8N / IMH8A), available in an SMT package. It serves as a detailed resource covering absolute maximum ratings, essential electrical characteristics, and typical application circuit guidelines. Designed primarily for electronics engineers and designers, this document ensures proper integration into new circuits by defining performance parameters like DC current gain ($\text{h}_{\text{FE}}$) and saturation voltage ($\text{VCE(sat)}$), enabling reliable high-quality product development.
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UMH8N / IMH8A
Transistors
General purpose (dual digital transistors) UMH8N / IMH8A
Features External dimensions (Unit : mm)
1) Two DTC114T chips in a EMT or UMT or SMT package. UMH8N
Equivalent circuits
UMH8N IMH8A
0.1Min.
Each lead has same dimensions ROHM : UMT6
R1 R1 EIAJ : SC-88
IMH8A 0. 0. 0.
Package, marking, and packaging specifications 0~ 0.
Type UMH8N IMH8A 1.6
Package UMT6 SMT6
Marking H8 H8 1.
Code TR T108
0.3Min. 2.
Basic ordering unit (pieces)
Each lead has same dimensions ROHM : SMT6
EIAJ : SC-74
Absolute maximum ratings (Ta=25 C)
Parameter Symbol Limits Unit
Collector-base voltage VCBO Collector-emitter voltage VCEO
Emitter-base voltage VEBO
Collector current IC m A 150(TOTAL)UMH8N ∗1 Power dissipation Pd m W
IMH8A 300(TOTAL) ∗2
Junction temperature Tj °C Storage temperature Tstg −55 to +150 °C ∗1 120m W per element must not be exceeded. ∗2 200m W per element must not be exceeded.
Electrical characteristics (Ta=25 C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO IC=50μA
Collector-emitter breakdown voltage BVCEO IC=1m A Emitter-base breakdown voltage BVEBO IE=50μA
Collector cutoff current ICBO 0.5 μA VCB=50V Emitter cutoff current IEBO 0.5 μA VEB=4V
Collector-emitter saturation voltage VCE(sat) 0.3 IC/IB=10m A/1m A
DC current transfer ratio h FE VCE=5V, IC=1m A
Transition frequency f T MHz VCE=10V, IE= −5m A, f=100MHz
Input resistance R1 kΩ
∗Transition frequency of the device.
Rev.A 1/2
Page Summary Contents For ROHM UMH8N IMH8A Data Sheet
Manual Details
| Brand | ROHM |
|---|---|
| Pages | 3 |
| File Size | 42.27 KB |
| Published | June 06, 2026 |
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Frequently Asked Questions
What are the temperature limits for storing this component?
The storage temperature range is from −55°C to +150°C.
Can I use these transistors in safety-critical equipment like medical devices?
No. For equipment where malfunction would endanger human life, you must consult a sales representative before use.
What are the maximum total power dissipation limits for UMH8N and IMH8A?
The UMH8N limit is 150mW (TOTAL), while the IMH8A limit is 300mW (TOTAL).