ROHM TT8M2 Data Sheet

Summary

This high-power MOSFET module integrates both N-channel and P-channel components in a durable TT8M2 package, optimized for reliable electronic switching applications. Featuring low on-state resistance and low voltage drive capabilities, this component is ideal for general-use equipment like audio/visual, communication devices, and automated appliances. The accompanying manual provides comprehensive details on absolute maximum ratings, detailed electrical characteristics, packaging specifications, and critical timing parameters to ensure optimal circuit design.

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2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/

TSST8

Silicon P-channel MOSFET

Features 1) Low on-state resistance.

2) Low voltage drive. 3) High power package.

Abbreviated symbol : M02

Each lead has same dimensions

Application Inner circuit Switching

Packaging specifications

Package Taping

Type Code TR

Basic ordering unit (pieces)

(1) Tr1 Source

TT8M2

∗1 ∗1 (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (1) (4)(3)(2) (5) Tr2 Drain (6) Tr2 Drain

∗1 ESD protection diode (7) Tr1 Drain ∗2 Body diode (8) Tr1 Drain

Absolute maximum ratings (Ta=25°C) <Tr1 : Nch>

Parameter Symbol Limits Unit

Drain−source voltage VDSS

Gate−source voltage VGSS ±12

Continuous ID ±2.5

Drain current

Pulsed IDP ±10

Continuous IS 0.8

Source current (Body diode) ∗1

Pulsed ISP

∗1 Pw≤10µs, Duty cycle≤1%

1/8 www.rohm.com 2009.06 - Rev.A

Page Summary Contents For ROHM TT8M2 Data Sheet

Page 1 2.5V Drive Nch MOSFET 1.5V Drive Pch MOSFET TT8M2 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ TSST8 Silicon P-channel MOSFET Features 1) Low on-state resistance. 2) Low voltage drive. 3...

Page 2 Data Sheet TT8M2 <Tr2 : Pch> Parameter Symbol Limits Unit Drain−source voltage VDSS −20 Gate−source voltage VGSS ±10 Continuous ID ±2.5 Drain current Pulsed IDP ±10 Continuous IS −0.8 Source cur...

Page 3 Data Sheet TT8M2 Electrical characteristics (Ta=25°C) < Characteristics for the Tr2( Pch ).> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 µA VGS=±10V, VDS=0V Drai...

Page 4 Data Sheet TT8M2 ST AT IC AI -S -S TA TE ST AT IC AI -S -S TA TE ES IS TA : R on )[m ES IS TA : R S( on )[m S( AI EN : I [A Electrical characteristics curves <Nch> Ta=25°C Ta=25°C VDS= 10V Pulse...

Page 5 Data Sheet TT8M2 SW IT IN IM : t [n s] EV ER SE AI EN : I [A VGS=0V Ta=25°C Ta=25°C Pulsed VDD= 15V f=1MHz ID= 2.5A VGS=0V RG=10Ω Pulsed Ta=125°C 0.1 Ta=75°C Ta=25°C Ta=-25°C SOURCE-DRAIN VOLTAGE : VS...

Page 6 Data Sheet TT8M2 ST AT IC AI -S -S TA TE ST AT IC AI -S -S TA TE AI EN : - [A ES IS TA : R S( )[m <Pch> ES IS TA : R S( )[m Ta=25°C VDS= -10V VGS= -10V Pulsed Pulsed VGS= -1.8V VGS= -4.5V VGS= -...

Page 7 Data Sheet TT8M2 ST AT IC AI -S -S TA TE AP AC IT AN : C [p F] Ta=25°C VGS=0V ES IS TA : R S( )[m Pulsed Pulsed ID= -2.5A Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 Ta=25°C VDD= -10V ID= -2.5A ID= -1.2A RG...

Page 8 Data Sheet TT8M2 Measurement circuits < Nch > VGS Pulse Width RL 50% 50% VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms...

Page 9 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	9
File Size	261.71 KB
Published	July 15, 2026

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Frequently Asked Questions

What is the maximum total power dissipation?

The maximum specified value for Total power dissipation (PD) is 1.25 W.

Can this device be used in safety-critical equipment like medical instruments?

No, it should not be used in equipment that requires an extremely high level of reliability or poses a direct threat to human life.

What are the operating voltage ranges for the MOSFETs?

The N-channel (Tr1) accepts up to ±12 V for Gate-source voltage (VGSS).

How should I handle exporting this product internationally?

You may be required to obtain a license or permit under the Foreign Exchange and the Foreign Trade Law.