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ROHM TT8M1 Data Handbook/Specifications Manual

Summary

This dual MOSFET package delivers high-efficiency power switching through both N-channel and P-channel transistors in a robust TSST8 housing. Featuring low on-resistance and simple 1.5V drive capability, it is ideal for engineers designing general electronic equipment needing reliable, high-power handling. The accompanying manual provides thorough technical data, including structural dimensions, absolute maximum ratings, detailed electrical characteristics curves, and full operational specifications required for precise circuit integration.

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Page 1 Text Content

1.5V Drive Nch + Pch MOSFET TT8M1 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ TSST8 Silicon P-channel MOSFET

Features 1) Low on-resistance.

2) High power package (TSST8).

3) Low voltage drive (1.5V drive). Abbreviated symbol :M01

Application Switching

Packaging specifications Inner circuit

Package Taping Type Code TR Basic ordering unit (pieces)

(1) Tr1 Source TT8M1 (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain

Absolute maximum ratings (Ta = 25C) (7) Tr1 Drain

(8) Tr1 Drain

Limits

Parameter Symbol Unit ∗1 ESD PROTECTION DIODE Tr1 : N-ch Tr2 : P-ch ∗2 BODY DIODE

Drain-source voltage VDSS 20

Gate-source voltage VGSS 10 10 Continuous ID 2.5 2.5

Drain current

Pulsed IDP *1 10 10 Source current Continuous Is 0.8 0.8 (Body Diode) Pulsed Isp *1 10 *2

1.25 W / TOTAL

Power dissipation PD

W / ELEMENT

Channel temperature Tch C

Range of storage temperature Tstg 55 to +150 C

*1 Pw10s, Duty cycle1%

*2 Mounted on a ceramic board.

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©2010 ROHM Co., Ltd. All rights reserved. 1/8 2010.08 - Rev.A

Page Summary Contents For ROHM TT8M1 Data Handbook/Specifications Manual

Page 1 1.5V Drive Nch + Pch MOSFET TT8M1 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ TSST8 Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package (TSST8). 3) Low volt...
Page 2 TT8M1 Data Sheet Electrical characteristics (Ta = 25C) <Tr1(Nch)> Symbol Min. Typ. Max. Unit Conditions Parameter Gate-source leakage IGSS 10 A VGS=10V, VDS=0V Drain-source breakdown voltag...
Page 3 TT8M1 Data Sheet Electrical characteristics (Ta = 25C) <Tr2(Pch)> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=10V, VDS=0V Drain-source breakdown voltag...
Page 4 TT8M1 Data Sheet ST AT IC AI -S -S TA TE ST AT IC AI -S -S TA TE Electrical characteristic curves (Ta = 25°C) IN : I [A ES IS TA : R n) [m ES IS TA : R n) [m <Tr1(Nch)> Ta=25°C VDS= 10V Pulsed ...
Page 5 TT8M1 Data Sheet AT E- SO VO LT AG : V [V SO EN : I s [ A] VGS=0V Ta=25°C Ta=25°C Pulsed Pulsed VDD=10V ID= 2.5A tf VGS=4.5V RG=10Ω ID= 1.25A td(off) Pulsed Ta= 125°C td(on) 0.1 Ta= 75°C Ta= 25°C Ta= ...
Page 6 TT8M1 Data Sheet ST AT IC AI -S -S TA TE ST AT IC AI -S -S TA TE ES IS TA : R (O )[m IN : - [A ES IS TA : R (O )[m <Tr2(Pch)> VGS= -10V VDS= -10V Ta=25°C Pulsed VGS= -4.5V Pulsed VGS= -1.4V VGS=...
Page 7 TT8M1 Data Sheet ST AT IC AI -S -S TA TE AP AC IT AN : C [p F] ES IS TA : R (O )[m Ta=25°C VGS=0V Pulsed Pulsed ID= -2.5A Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Ta=25°C VDD= -10V ID= -2.5A RG=10Ω ID= -1.2A...
Page 8 TT8M1 Data Sheet Measurement circuits <Tr1(Nch)> Pulse width VGS ID VDS 90% 50% 50% RL VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching time measurement circuit Fig.1-2 Swit...
Page 9 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand ROHM
Pages 9
File Size 396.85 KB
Published July 12, 2026
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