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ROHM EMZ1 UMZ1N IMZ1A Data Handbook/Specifications Sheet

Summary

This datasheet covers the ROHM EMZ1, UMZ1N, and IMZ1A dual transistors, each integrating one 2SA1037AK PNP chip and one 2SC2412K NPN chip in a single compact package. The EMZ1 uses EMT6, UMZ1N uses UMT6 (SC-88), and IMZ1A uses SMT6 (SC-74) surface mount packages, all compatible with automatic mounting machines. Absolute maximum ratings include collector-base voltage of ±60V, collector-emitter voltage of ±50V, collector current of ±150mA, and total power dissipation of 150mW for EMT/UMT or 300mW

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Page 1 Text Content

EMZ1 / UMZ1N / IMZ1A

Transistors

General purpose transistor (dual transistors) EMZ1 / UMZ1N / IMZ1A

Features External dimensions (Unit : mm)

1) Both a 2SA1037AK chip and 2SC2412K chip in a

EMT or UMT or SMT package.

2) Mounting possible with EMT3 or UMT3 or SMT3 (2)(5)

(6) (1) automatic mounting machines. 1.2 1.6

3) Transistor elements are independent, eliminating

interference. Each lead has same dimensions

4) Mounting cost and area can be cut in half.

ROHM : EMT6

Abbreviated symbol : Z1

UMZ1N

Structure NPN / PNP epitaxial planar silicon transistor 0. 0. 0.

Equivalent circuit

0. 0. 0.1Min.

2. 90. Each lead has same dimensions 0. 90. 1.

EMZ1 / UMZ1N IMZ1A

(3) (2) (1) (4) (6)(5) ROHM : UMT6

EIAJ : SC-88

Abbreviated symbol : Z1

Tr1 Tr1

Tr2 Tr2

IMZ1A

Absolute maximum ratings (Ta = 25°C)

0.3to0.6

Limits

Parameter Symbol Unit Each lead has same dimensions

Tr1 Tr2

ROHM : SMT6 EIAJ : SC-74

Collector-base voltage VCBO −60

Collector-emitter voltage VCEO −50

Abbreviated symbol : Z1

Emitter-base voltage VEBO −6

Collector current IC −150 m A150

EMZ1, UMZ1N 150 (TOTAL) ∗1

Power

PC m W

dissipation ∗2

IMZ1A 300 (TOTAL)

Junction temperature Tj ˚C

Storage temperature Tstg −55 to +150 ˚C

∗1 120m W per element must not be exceeded. ∗2 200m W per element must not be exceeded.

Rev.A 1/4

Page Summary Contents For ROHM EMZ1 UMZ1N IMZ1A Data Handbook/Specifications Sheet

Page 1 EMZ1 / UMZ1N / IMZ1A Transistors General purpose transistor (dual transistors) EMZ1 / UMZ1N / IMZ1A Features External dimensions (Unit : mm) 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT ...
Page 2 EMZ1 / UMZ1N / IMZ1A LL IC Transistors Electrical characteristics (Ta = 25°C) Tr1 (NPN) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO IC=50µA Collector-emitter...
Page 3 EMZ1 / UMZ1N / IMZ1A IN h F LL IT ob p F LL IO LT (s at ) ( IT IT ib p F Transistors Ta=25˚C VCE=5V Ta=25˚C Ta=100˚C VCE=5V 3V −55˚C IC/IB=50 LL IO LT (s at ) ( IN h F LL IM rb b' (p s) COLLECTOR CURR...
Page 4 LL IO LT (s at ) ( EMZ1 / UMZ1N / IMZ1A IN h F LL Ic Transistors Tr2 (PNP) VCE=−6V Ta=25˚C Ta=25˚C Ta=100˚C −31.5 −20 25˚C −500 IT IO −2 f T z) −20 IN h F −50µA LL IC IB=0 IB=0 BASE TO EMITTER VOLTAGE...
Page 5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject...

Manual Details

Brand ROHM
Pages 5
File Size 95.70 KB
Published June 22, 2026
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Frequently Asked Questions

What is the maximum dissipation allowed for the transistors?

The junction temperature (Tj) specification indicates that 200mW per element must not be exceeded (where applicable).

Are there specific compatibility concerns or use limitations?

These products are intended for ordinary electronic equipment but should not be used in safety-critical applications like medical instruments or aerospace machinery without consulting a sales representative.

What is the device's general current handling capability?

The collector current (IC) ratings are generally specified between 150mA and 300mA total, depending on the specific model (EMZ1/UMZ1N vs IMZ1A).

How reliable are these components for specialized equipment?

Users must consult with a sales representative if the product is intended for extremely high-reliability applications where malfunction could endanger human life.