ROHM 2SAR544P Data Manual/Specifications

Summary

This midium power PNP Silicon planar transistor is designed for high-speed switching applications, offering reliable performance up to -80V and -2.5A while maintaining a low saturation voltage. The comprehensive datasheet details all critical operational parameters, including absolute maximum ratings, DC current gain versus load, transition frequency, and detailed electrical characteristic curves. This component is ideal for professional circuit designers building general electronic devices that require robust power management and fast signal switching performance.

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Midium Power Transistors (-80V / -2.5A) 2SAR544P

Structure Dimensions (Unit : mm) PNP Silicon epitaxial planar transistor

Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50m A)

2) High speed switching

Applications

Abbreviated symbol : MS

Driver

Packaging specifications Inner circuit (Unit : mm)

Package Taping

Type Code T100

Basic ordering unit (pieces)

2SAR544P

Absolute maximum ratings (Ta = 25C)

Parameter Symbol Limits Unit (1) Base (2) Collector

Collector-base voltage VCBO -80

(3) Emitter

Collector-emitter voltage VCEO -80

Emitter-base voltage VEBO -6

DC IC -2.5

Collector current

Pulsed ICP *1 -5 *2 PD 0.5

Power dissipation

*3 PD

Junction temperature Tj C Range of storage temperature Tstg -55 to 150 C *1 Pw=10ms, Single Pulse *2 Each terminal mounted on a recommended land. *3 Mounted on a ceramic board. (40x40x0.7mm³)

www.rohm.com

1/4 2009.12 - Rev.A

Page Summary Contents For ROHM 2SAR544P Data Manual/Specifications

Page 1 Midium Power Transistors (-80V / -2.5A) 2SAR544P Structure Dimensions (Unit : mm) PNP Silicon epitaxial planar transistor Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC ...

Page 2 Data Sheet 2SAR544P Electrical characteristic (Ta = 25C) Symbol Min. Typ. Max. Unit Conditions Parameter Collector-emitter breakdown voltage BVCEO -80 IC= -1m A Collector-base breakdown voltage BVC...

Page 3 Data Sheet 2SAR544P LL CE OT UPT APA NATI C : )Fp(bo CELL OT UTAS OITA OV GATL : E tas( )[V CELL OT NE : T IC [A Electrical characteristic curves ME TI RET NI UP C T CAPA NATI C : E )Fp(bi -2.5m A T...

Page 4 Data Sheet 2SAR544P Switching time test circuit RL=7.5Ω VCC -10V~_ Pw 50μs DUTY CYCLE1% BASE CURENT WAVEFORM tstgton tf COLLECTOR CURRENT WAVEFORM IC www.rohm.com 4/4 2009.12 - Rev.A ○c 2009 ROHM Co...

Page 5 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	5
File Size	238.10 KB
Published	June 19, 2026

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Frequently Asked Questions

What is the maximum DC collector current rating?

The absolute maximum collector current (DC I) is rated at -2.5 A.

Can this transistor be used in critical or safety-related equipment?

No, it is not designed for systems requiring extremely high reliability (e.g., medical instruments or aerospace machinery).

What type of board should the device be mounted on?

It can be mounted on a recommended land or, alternatively, on a ceramic board.

What is the maximum allowable junction temperature?

The specified limit for the Junction temperature (Tj) is 150 °C.