ROHM SH8M70 Data Sheet

Summary

Discover the SH8M70, a robust N/P channel Power MOSFET optimized for efficient power switching and DC/DC converter applications. This comprehensive manual serves as an essential guide for electrical engineers and designers, providing detailed specifications on absolute maximum ratings, fundamental electrical characteristics (Vds, Vgs), and advanced performance data. Use this technical resource to ensure reliable integration into general-purpose electronic equipment, guaranteeing optimal circuit performance from power management systems to converters.

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10V Drive Nch+Pch MOSFET SH8M70 Structure Dimensions (Unit : mm) Silicon N-channel / P-channel MOSFET

Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).

Application Power switching, DC / DC converter.

Each lead has same dimensions

Packaging specifications Inner circuit

Package Taping (8) (7) (6) (5) (8) (7) (6) (5)

Type Code TB

Basic ordering unit (pieces)

SH8M70

(1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate

(3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain

(6) Tr2 Drain (7) Tr1 Drain

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE (8) Tr1 Drain

∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.

Absolute maximum ratings (Ta=25C)

Limits

Parameter Symbol Unit

N-ch P-ch

Drain-source voltage −250 VVDSS Gate-source voltage −20 VVGSS Continuous ±3.0 ±2.5 AID

Drain current

Pulsed ±12 ±10 AIDP Continuous Source current 1.0 −1.0 AIS

(Body diode) ∗1

Pulsed −10 AISP

Total power dissipation 2.0(TOTAL) 1.4(ELEMENT) WPD

Channel temperature °CTch

Storage temperature −55 to +150 °CTstg

∗1 Pw≤10μs, Duty cycle≤1% ∗2 MOUNTED ON A CERAMIC BOARD.

www.rohm.com

1/7 2010.06 - Rev.B

Page Summary Contents For ROHM SH8M70 Data Sheet

Page 1 10V Drive Nch+Pch MOSFET SH8M70 Structure Dimensions (Unit : mm) Silicon N-channel / P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package...

Page 2 Data Sheet SH8M70 N-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 μA VGS=±25V, VDS=0V Drain-source breakdown voltage V(BR) DSS I...

Page 3 Data Sheet SH8M70 P-ch Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS ±10 μA VGS=±15V, VDS=0V Drain-source breakdown voltage V(BR) DSS −...

Page 4 ou rc ur re nt IS (A Data Sheet SH8M70 at ou rc ol ta ge (V yp ic al ap ac ita nc : C p F N-ch Electrical characteristic curves Ta=25°C VDD=125V VGS=10V RG=10Ω Pulsed td(off) td(on) Ta=25°C f=1MHz tr...

Page 5 or ar ra ns fe dm itt an ce Data Sheet SH8M70 yp ic al ap ac ita nc : C p F : | fs | ( ra in ur re nt -I VDS=10V VDS=10V VGS=10V Pulsed ID=1m A 1.8 9V Ta=-25°C 0.8 0.1 25°C Drain Current : ID(A) Drain...

Page 6 ev er se ec ov er im : t rr ns Data Sheet SH8M70 ta tic ra in -S ou rc n- ta te es is ta nc VDS=10V Pulsed Ta=125°C 75°C 25°C Ta=-25°C VDS=10V VGS=10V ID=1m A Pulsed Drain Current : -ID(A) Drain Curre...

Page 7 Data Sheet SH8M70 N-ch Measurement circuit VGS ID Pulse Width RL 50%50% 10%VGS D.U.T. VDS 90% 90% trtd(on) trtd(off) ton toff Fig.13 Switching Time Measurement Circuit Fig.14 Switching Waveforms VGS ...

Page 8 Notice No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without not...

Manual Details

Brand	ROHM
Pages	8
File Size	192.67 KB
Published	June 04, 2026

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