ROHM SH8M14 User Guide and Manual

Summary

This robust MOSFET package seamlessly combines both N-channel and P-channel FETs, providing a high-power solution for efficient switching applications. This comprehensive technical data sheet is essential reading for electrical engineers and power electronics designers. It details critical operational parameters, including low on-resistance figures, maximum ratings, detailed switching waveforms, gate charge analysis, and thermal resistance curves. Use this guide to ensure optimal integration and reliable performance in your next circuit design.

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Data Sheet

4V Drive Nch + Pch MOSFET SH8M14 Structure Dimensions (Unit : mm)

Silicon N-channel MOSFET/ SOP8

Silicon P-channel MOSFET

Features 1) Low on-resistance. 2) High power package(SOP8).

3) Low voltage drive(4V drive).

Application Switching

Packaging specifications Inner circuit

Package Taping (8) (7) (6) (5)

Type Code TB

Basic ordering unit (pieces)

SH8M14

(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source

(4) Tr2 Gate

Absolute maximum ratings (Ta = 25C)

(5) Tr2 Drain

(6) Tr2 Drain (1) (2) (3) (4)

Limits

Parameter Symbol Unit (7) Tr1 Drain

∗1 ESD PROTECTION DIODE

Tr1 : N-ch Tr2 : P-ch (8) Tr1 Drain

∗2 BODY DIODE

Drain-source voltage VDSS 30

Gate-source voltage VGSS 20 20 Continuous ID 9 7

Drain current

Pulsed IDP *1 36 28

Source current Continuous Is 1.6 1.6

(Body Diode) Pulsed Isp *1 28 *2

2.0 W / TOTAL

Power dissipation PD

1.4 W / ELEMENT

Channel temperature Tch C

Range of storage temperature Tstg 55 to 150 C

*1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.

Page Summary Contents For ROHM SH8M14 User Guide and Manual

Page 1 Data Sheet 4V Drive Nch + Pch MOSFET SH8M14 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET/ SOP8 Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package(SOP8). 3) L...

Page 2 Data Sheet SH8M14 Electrical characteristics (Ta = 25C) <Tr1(Nch)> Symbol Min. Typ. Max. Unit Conditions Parameter Gate-source leakage IGSS 10 A VGS=±20V, VDS=0V Drain-source breakdown volta...

Page 3 Data Sheet SH8M14 Electrical characteristics (Ta = 25C) <Tr2(Pch)> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 A VGS=20V, VDS=0V Drain-source breakdown volta...

Page 4 Data Sheet SH8M14 Electrical characteristic curves (Ta=25C) ta ti ra in -S rc -S ta te is ta ta ti ra in -S rc -S ta te is ta [m [m ra in rr 〈Tr.1(Nch)〉 Fig.1 Typical Output Characteristics (Ⅰ) Fig....

Page 5 Data Sheet SH8M14 it in im rc rr rw rd ra fe it ta Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics VDS=10V VDS=10V pulsed pulsed Ta=125°C Ta=75°C Ta=125°C Ta...

Page 6 Data Sheet SH8M14 rm li ra ie rm is ta r（ t） FIg.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) Ta=25°C (VGS = 10V) f=1...

Page 7 Data Sheet SH8M14 IC IN -S -S IS IN [A IN [A 〈Tr.2(Pch)〉 Fig.1 Typical Output Characteristics(Ⅰ) Fig.2 Typical Output Characteristics(Ⅱ) Ta=25°C Ta=25°C VGS= -3.0V Pulsed Pulsed VGS= -10V VGS= -4.5V V...

Page 8 Data Sheet SH8M14 IC IN -S -S IT IN IM [A Fig.7 Static Drain-Source On-State Fig.8 Forward Transfer Admittance Resistance vs. Drain Current(Ⅳ) vs. Drain Current VGS= -4.0V VDS= -10V Pulsed Ta= 125°C P...

Page 9 Data Sheet SH8M14 IZ IE IS t) Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Aera Operation in this area is limited by RDS(ON) (VGS= -10V) PW=100us PW=1ms PW = 10ms ...

Page 10 Data Sheet SH8M14 Measurement circuits <Tr1(Nch)> Pulse width VGS ID VDS 90% 50% 50% RL VGS 10% RG VDD 90% 90% trtd(on) tftd(off) ton toff Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Swi...

Page 11 Notice Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/conta...

Manual Details

Brand	ROHM
Pages	11
File Size	1.22 MB
Published	June 18, 2026

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Frequently Asked Questions

What warning is provided regarding electrical environments when using this product?

The notice advises that the product might cause chip aging and breakdown in large electrified environments, recommending an ESD protection circuit design.

What is the minimum recommended mounting surface for optimal operation?

It must be mounted on a ceramic board to ensure proper heat dissipation.

How are the maximum specified drain-source voltage ranges outlined?

The absolute maximum ratings specify V_DSS limits of ±30V for both N-channel (Tr1) and P-channel (Tr2).

What is the typical static on-state resistance range?

For Tr1 (N-ch), it ranges from 18 to 25 mΩ, while for Tr2 (P-ch), it ranges from 29.0 to 39.0 mΩ.